2SK1040 - описание и поиск аналогов

 ..1. Size:58K  inchange semiconductor
 2sk1040.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1040 DESCRIPTION Drain Current ID=10A@ TC=25 Drain Source Voltage- VDSS=400V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER Drain-Source Voltage (V =0) 400 V DSS GS V Gate-Source Voltag

 8.1. Size:515K  1
 2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf 

 9.1. Size:72K  1
 2sk105.pdf 

 9.2. Size:245K  1
 2sk1007-01.pdf 

FUJI POWER MOSFET 2SK1007-01 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC TO-220AB EIAJ SC-46 Equivalent circuit schematic Maxi

 9.3. Size:211K  1
 2sk1006-01mr.pdf 

FUJI POWER MOSFET 2SK1006-01MR N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-220F15 Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators 2.54 UPS DC-DC converters 3. Source General purpose power amplifier JEDEC SC-67 EIAJ Equivalent circuit schematic Max

 9.4. Size:244K  1
 2sk1017.pdf 

FUJI POWER MOSFET 2SK1017 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC EIAJ SC-65 Equivalent circuit schematic Maximum ratings and

 9.5. Size:220K  1
 2sk1019.pdf 

FUJI POWER MOSFET 2SK1019 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3PL 0.3 Low on-resistance 0.2 20.5 Max 5 3.2 No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee 2 3 0.2 0.2 1.1 0.2 Applications 0.3 3.0 0.2 Switching regulators 0.6+0.2 5.45 0.2 5.45 UPS 1. Gate 2. Drain DC-DC co

 9.6. Size:69K  toshiba
 2sk1079.pdf 

Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003

 9.7. Size:293K  toshiba
 2sk1061.pdf 

2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Unit mm Analog Switch Applications Interface Applications Excellent switching times ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs Low on resistance R = 0.6 (typ.) DS (ON) Enhancement-mode Complementary to 2

 9.8. Size:371K  toshiba
 2sk1078.pdf 

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

 9.9. Size:333K  toshiba
 2sk1062.pdf 

2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Unit mm Analog Switching Applications Interface Applications Excellent switching time ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs @I = 50 mA D Low on resistance R = 0.6 (typ.) @ I = 50 mA DS (ON) D Enhanceme

 9.10. Size:302K  sanyo
 2sk1066.pdf 

Ordering number EN2747 N-Channel Junction Silicon FET 2SK1066 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions High-frequency general-purpose amplifier. unit mm AM tuner RF amplifier. 2058 Low-noise amplifier. [2SK1066] 0.3 Features 0.15 3 Large yfs . 0 to 0.1 Small Crss. Ultralow noise figure. Ultrasmal

 9.11. Size:42K  sanyo
 2sk1065.pdf 

Ordering number ENN2746A N-Channel Junction Silicon FET 2SK1065 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions Ultrasmall package facilitates miniaturization in end unit mm products. 2057A Small Crss (Crss=0.04pF typ). [2SK1065] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Gate 2 Drain 3 Source SANYO MCP Specific

 9.12. Size:143K  sanyo
 2sk1067.pdf 

Ordering number EN2719 N-Channel Silicon MOSFET 2SK1067 FM Tuner, VHF-Band Amplifier Applications Features Package Dimensions Low noise NF=1.8dB typ (f=100MHz). unit mm High power gain PG=27dB typ (f=100MHz). 2057 Small reverse transfer capacitance Crss=0.035pF [2SK1067] (VDS=10V, f=1MHz). Ultrasmall-sized package (MCP) permitting 0.3 0.15 2SK1067-applied sets to

 9.13. Size:106K  sanyo
 2sk1053.pdf 

Ordering number EN3440 N-Channel Silicon MOSFET 2SK1053 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2052C [2SK1053] 10.2 4.5 3.6 5.1 1.3 1.2 1 Gate 0.8 0.4 2 Drain 1 2 3 3 Source EIAJ SC-46 2.55 2.55 SANYO TO-220AB Specifications Absolute Maximum Ratings at Ta = 25 C

 9.14. Size:104K  sanyo
 2sk1052.pdf 

Ordering number EN3439 N-Channel Silicon MOSFET 2SK1052 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2052C [2SK1052] 10.2 4.5 3.6 5.1 1.3 1.2 1 Gate 0.8 0.4 2 Drain 1 2 3 3 Source EIAJ SC-46 2.55 2.55 SANYO TO-220AB Specifications Absolute Maximum Ratings at Ta = 25 C

 9.15. Size:94K  sanyo
 2sk1068.pdf 

Ordering number EN2748 N-Channel Junction Silicon FET 2SK1068 Impedance Conversion Applications Applications Package Dimensions Impedance conversion. unit mm Infrared sensor. 2058 [2SK1068] Features 0.3 Small IGSS. 0.15 3 Small Crss. 0 to 0.1 Ultrasmall-sized package permitting 2SK1068- applied sets to be made smaller and slimmer. 1 2 0.3 0.6 0.65 0.65

 9.16. Size:98K  sanyo
 2sk1069.pdf 

Ordering number EN2749 N-Channel Junction Silicon FET 2SK1069 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency general-purpose amplifiers. unit mm Ideal for use in variable resistors, analog switches, 2058 low-frequency amplifiers, and constant-current [2SK1069] circuits. 0.3 0.15 3 Features 0 to 0.1 Adoption of FBE

 9.17. Size:85K  renesas
 rej03g0906 2sk1056 2sk1057 2sk1058.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.18. Size:84K  renesas
 2sk1070.pdf 

Preliminary Datasheet R07DS0282EJ0300 2SK1070 (Previous REJ03G0574-0200) Rev.3.00 Silicon N-Channel Junction FET Mar 28, 2011 Application Low frequency / High frequency amplifier Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 1 1. Drain 2. Source 2 3. Gate Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Gate to drain voltage

 9.19. Size:302K  nec
 2sk1060.pdf 

 9.20. Size:277K  nec
 2sk1059-z.pdf 

 9.21. Size:299K  nec
 2sk1060-z.pdf 

 9.22. Size:280K  nec
 2sk1059.pdf 

 9.23. Size:34K  panasonic
 2sk1033.pdf 

Power F-MOS FETs 2SK1033 2SK1033 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) RDS(on) = 0.45 (typ) 5.5 0.2 2.7 0.2 High-speed switching tf =180ns(typ) No secondary breakdown 3.1 0.1 Low-voltage drive Applications DC-DC converter 1.3 0.2 1.4 0.1 Non-contact relay +0.2 0.5 -0.1 Solenoid drive 0.8 0.1 Mot

 9.24. Size:33K  panasonic
 2sk1036.pdf 

Power F-MOS FETs 2SK1036 2SK1036 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) RDS(on)= 0.23 (typ) 5.5 0.2 2.7 0.2 High-speed switching tf = 80ns(typ) No secondary breakdown 3.1 0.1 Applications DC-DC converter 1.3 0.2 Non-contact relay 1.4 0.1 Solenoid drive +0.2 0.5 -0.1 0.8 0.1 Motor drive 2.54 0.

 9.25. Size:35K  panasonic
 2sk1035.pdf 

Power F-MOS FETs 2SK1035 2SK1035 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) RDS(on)= 0.2 (typ) 5.5 0.2 2.7 0.2 High-speed switching tf = 100ns(typ) No secondary breakdown 3.1 0.1 Low-voltage drive Applications DC-DC converter 1.3 0.2 1.4 0.1 Non-contact relay +0.2 0.5 -0.1 Solenoid drive 0.8 0.1 Motor

 9.26. Size:134K  fuji
 2sk1011-01.pdf 

 9.27. Size:60K  fuji
 2sk1099.pdf 

 9.28. Size:165K  fuji
 2sk1081-01.pdf 

 9.29. Size:73K  fuji
 2sk1005.pdf 

 9.30. Size:183K  fuji
 2sk1089.pdf 

N-channel MOS-FET 2SK1089 F-III Series 60V 0,035 35A 80W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C),

 9.31. Size:57K  fuji
 2sk1018.pdf 

 9.32. Size:178K  fuji
 2sk1098-m.pdf 

N-channel MOS-FET 2SK1098-M F-III Series 150V 0,5 6A 30W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C),

 9.33. Size:133K  fuji
 2sk1013-01.pdf 

 9.34. Size:169K  fuji
 2sk1012-01.pdf 

 9.35. Size:173K  fuji
 2sk1015-01.pdf 

 9.36. Size:127K  fuji
 2sk1006-01m.pdf 

 9.37. Size:140K  fuji
 2sk1096-mr.pdf 

 9.38. Size:175K  fuji
 2sk1085-m.pdf 

N-channel MOS-FET 2SK1085-M F-III Series 150V 0,9 3A 20W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C),

 9.39. Size:64K  fuji
 2sk1030 2sk1030a.pdf 

 9.40. Size:254K  fuji
 2sk1014-01.pdf 

FUJI POWER MOSFET 2SK1014-01 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC EIAJ SC-65 Equivalent circuit schematic Maximum ratings

 9.41. Size:1624K  fuji
 2sk1016.pdf 

 9.42. Size:160K  fuji
 2sk1024-01.pdf 

 9.43. Size:73K  fuji
 2sk1004.pdf 

 9.44. Size:143K  fuji
 2sk1086.pdf 

 9.45. Size:167K  fuji
 2sk1010-01.pdf 

 9.46. Size:167K  fuji
 2sk1009-01.pdf 

 9.47. Size:1246K  fuji
 2sk1082.pdf 

 9.48. Size:73K  fuji
 2sk1006.pdf 

 9.49. Size:57K  fuji
 2sk1021.pdf 

2SK1021

 9.50. Size:138K  fuji
 2sk1017-01.pdf 

 9.51. Size:166K  fuji
 2sk1023-01.pdf 

 9.52. Size:163K  fuji
 2sk1082-01.pdf 

 9.53. Size:69K  fuji
 2sk1032 2sk1032a.pdf 

 9.54. Size:133K  fuji
 2sk1008-01.pdf 

 9.55. Size:176K  fuji
 2sk1016-01.pdf 

 9.56. Size:40K  hitachi
 2sk1056 2sk1057 2sk1058.pdf 

2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier

 9.57. Size:20K  hitachi
 2sk1093.pdf 

2SK1093 Silicon N-Channel MOS FET Application TO 220FM High speed power switching Features Low on-resistance 2 1 High speed switching 2 3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta

 9.58. Size:55K  hitachi
 2sk1057 2sk1058.pdf 

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 9.59. Size:19K  hitachi
 2sk1094.pdf 

2SK1094 Silicon N-Channel MOS FET Application TO 220FM High speed power switching Features Low on-resistance 2 High speed switching 1 2 3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta

 9.60. Size:19K  hitachi
 2sk1095.pdf 

2SK1095 Silicon N-Channel MOS FET Application TO 220FM High speed power switching Features Low on-resistance 2 1 2 High speed switching 3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta

 9.61. Size:48K  no
 2sk932 2sk937 2sk968 2sk998 2sk1000.pdf 

 9.62. Size:125K  no
 2sk1001.pdf 

 9.63. Size:132K  no
 2sk1029.pdf 

 9.64. Size:53K  interfet
 2sk17 2sk40 2sk59 2sk105 ifn17 ifn40 ifn59 ifn105.pdf 

Databook.fxp 1/14/99 2 03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK17 2SK40 2SK59 2SK105 Japanese IFN17 IFN40 IFN59 IFN105 InterFET NJ16 NJ16 NJ16 NJ16 Process Unit N N N N Parameters Conditions Limit Channel Channel Channel Channel V BVGSS IG = 1.0 A 20 50 30 50 Min nA 0.10 1.0 1.0 1.0 IGSS VGS = ( )

 9.65. Size:200K  inchange semiconductor
 2sk1023.pdf 

isc N-Channel MOSFET Transistor 2SK1023 DESCRIPTION Drain Current I =4A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain

 9.66. Size:60K  inchange semiconductor
 2sk1022.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1022 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- VDSS=900V(Min) Fast Switching Speed APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 900 V DSS GS V Gat

 9.67. Size:61K  inchange semiconductor
 2sk1007.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1007 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- VDSS= 450V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL

 9.68. Size:204K  inchange semiconductor
 2sk1099.pdf 

isc N-Channel MOSFET Transistor 2SK1099 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)

 9.69. Size:223K  inchange semiconductor
 2sk1020.pdf 

isc N-Channel MOSFET Transistor 2SK1020 DESCRIPTION Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vol

 9.70. Size:203K  inchange semiconductor
 2sk1014.pdf 

isc N-Channel MOSFET Transistor 2SK1014 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS

 9.71. Size:44K  inchange semiconductor
 2sk1064.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1064 DESCRIPTION Drain Current ID=15A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) Fast Switching Speed APPLICATIONS High current , high speed switching Switch mode power supplies DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor s B+ f

 9.72. Size:203K  inchange semiconductor
 2sk1018.pdf 

isc N-Channel MOSFET Transistor 2SK1018 DESCRIPTION Drain Current I =18A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS

 9.73. Size:252K  inchange semiconductor
 2sk1093.pdf 

isc N-Channel MOSFET Transistor 2SK1093 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.74. Size:202K  inchange semiconductor
 2sk1011.pdf 

isc N-Channel MOSFET Transistor 2SK1011 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS G

 9.75. Size:203K  inchange semiconductor
 2sk1081.pdf 

isc N-Channel MOSFET Transistor 2SK1081 DESCRIPTION Drain Current I =7A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 8

 9.76. Size:199K  inchange semiconductor
 2sk1010.pdf 

isc N-Channel MOSFET Transistor 2SK1010 DESCRIPTION Drain Current I =6A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)

 9.77. Size:203K  inchange semiconductor
 2sk1017.pdf 

isc N-Channel MOSFET Transistor 2SK1017 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS

 9.78. Size:257K  inchange semiconductor
 2sk1029.pdf 

isc N-Channel MOSFET Transistor 2SK1029 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.79. Size:200K  inchange semiconductor
 2sk1085-m.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1085-M FEATURES With TO-220F packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 9.80. Size:200K  inchange semiconductor
 2sk1024.pdf 

isc N-Channel MOSFET Transistor 2SK1024 DESCRIPTION Drain Current I =3.5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra

 9.81. Size:203K  inchange semiconductor
 2sk1016.pdf 

isc N-Channel MOSFET Transistor 2SK1016 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS

 9.82. Size:62K  inchange semiconductor
 2sk1074.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1074 DESCRIPTION Drain Current ID=3A@ TC=25 Drain Source Voltage- VDSS=800V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 800 V DSS GS V Gate-Source Volta

 9.83. Size:200K  inchange semiconductor
 2sk1053.pdf 

isc N-Channel MOSFET Transistor 2SK1053 DESCRIPTION Drain Current I =1A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rela

 9.84. Size:203K  inchange semiconductor
 2sk1013.pdf 

isc N-Channel MOSFET Transistor 2SK1013 DESCRIPTION Drain Current I =13A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS G

 9.85. Size:203K  inchange semiconductor
 2sk1082.pdf 

isc N-Channel MOSFET Transistor 2SK1082 DESCRIPTION Drain Current I =6A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 9

 9.86. Size:252K  inchange semiconductor
 2sk1094.pdf 

isc N-Channel MOSFET Transistor 2SK1094 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.87. Size:200K  inchange semiconductor
 2sk1052.pdf 

isc N-Channel MOSFET Transistor 2SK1052 DESCRIPTION Drain Current I =0.5A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and re

 9.88. Size:201K  inchange semiconductor
 2sk1073.pdf 

isc N-Channel MOSFET Transistor 2SK1073 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 8

 9.89. Size:265K  inchange semiconductor
 2sk1008.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1008 DESCRIPTION Drain Current I =4.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vo

 9.90. Size:61K  inchange semiconductor
 2sk1039.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1039 DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- VDSS=400V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 400 V DSS GS V Gate-Source Volta

 9.91. Size:200K  inchange semiconductor
 2sk1021.pdf 

isc N-Channel MOSFET Transistor 2SK1021 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Volta

 9.92. Size:226K  inchange semiconductor
 2sk1095.pdf 

isc N-Channel MOSFET Transistor 2SK1095 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

 9.93. Size:200K  inchange semiconductor
 2sk1009.pdf 

isc N-Channel MOSFET Transistor 2SK1009 DESCRIPTION Drain Current I =7A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS

 9.94. Size:63K  inchange semiconductor
 2sk1015.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1015 DESCRIPTION Drain Current ID=12A@ TC=25 Drain Source Voltage- VDSS=500V(Min) APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 500 V DSS GS V Gate-Source Voltage 30 V G

 9.95. Size:203K  inchange semiconductor
 2sk1012.pdf 

isc N-Channel MOSFET Transistor 2SK1012 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS G

 9.96. Size:61K  inchange semiconductor
 2sk1038.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1038 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- VDSS=400V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 400 V DSS GS V Gate-Source Volta

 9.97. Size:200K  inchange semiconductor
 2sk1019.pdf 

isc N-Channel MOSFET Transistor 2SK1019 DESCRIPTION Drain Current I =35A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS

 9.98. Size:44K  inchange semiconductor
 2sk1063.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1063 DESCRIPTION Drain Current ID=15A@ TC=25 Drain Source Voltage- VDSS= 450V(Min) Fast Switching Speed APPLICATIONS High current , high speed switching Switch mode power supplies DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor s B+ f