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2SK776 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK776
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 60 W
   Voltaje máximo drenador - fuente |Vds|: 450 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 20 nS
   Conductancia de drenaje-sustrato (Cd): 100 pF
   Resistencia entre drenaje y fuente RDS(on): 1.6 Ohm
   Paquete / Cubierta: TO220AB

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2SK776 Datasheet (PDF)

 ..1. Size:38K  no
2sk776.pdf

2SK776

 9.1. Size:671K  sanyo
2sk775.pdf

2SK776 2SK776

"2SK775""2SK775""2SK775""2SK775""2SK775""2SK775""2SK775""2SK775"

 9.2. Size:77K  sanyo
2sk772.pdf

2SK776 2SK776

Ordering number:EN2392AN-Channel Junction Silicon FET2SK772AF Amplifier ApplicationsApplications Package Dimensions Variable resistors, analog switches, AF amplifier,unit:mmconstant-current circuit.2034A[2SK772]2.24.0Features Adoption of FBET process.0.40.50.40.41 2 31 : Source1.3 1.32 : Gate3 : Drain3.03.8nom SANYO : SPASpecificationsAb

 9.3. Size:79K  sanyo
2sk771.pdf

2SK776 2SK776

Ordering number:EN2391N-Channel Junction Silicon FET2SK771Low-Frequency General-PurposeAmplifier ApplicationsApplications Package Dimensions Variable resistors, analog switches, AF amplifier,unit:mmconstant-current circuit.2050A[2SK771]Features0.40.16 Adoption of FBET process.3 Ultrasmall-sized package permitting sets to be made0 to 0.1smaller and sl

 9.4. Size:145K  nec
2sk773.pdf

2SK776 2SK776

 9.5. Size:154K  nec
2sk774.pdf

2SK776 2SK776

 9.6. Size:238K  inchange semiconductor
2sk777.pdf

2SK776 2SK776

isc N-Channel MOSFET Transistor 2SK777DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve

 9.7. Size:234K  inchange semiconductor
2sk770.pdf

2SK776 2SK776

isc N-Channel MOSFET Transistor 2SK770DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conver

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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