2SK776 Datasheet and Replacement
Type Designator: 2SK776
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: TO220AB
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2SK776 Datasheet (PDF)
2sk772.pdf

Ordering number:EN2392AN-Channel Junction Silicon FET2SK772AF Amplifier ApplicationsApplications Package Dimensions Variable resistors, analog switches, AF amplifier,unit:mmconstant-current circuit.2034A[2SK772]2.24.0Features Adoption of FBET process.0.40.50.40.41 2 31 : Source1.3 1.32 : Gate3 : Drain3.03.8nom SANYO : SPASpecificationsAb
2sk771.pdf

Ordering number:EN2391N-Channel Junction Silicon FET2SK771Low-Frequency General-PurposeAmplifier ApplicationsApplications Package Dimensions Variable resistors, analog switches, AF amplifier,unit:mmconstant-current circuit.2050A[2SK771]Features0.40.16 Adoption of FBET process.3 Ultrasmall-sized package permitting sets to be made0 to 0.1smaller and sl
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: PHT4NQ10LT | MMN60NF06 | S85N16RN | FQB7P20TMF085 | BSC011N03LSI | 2N6660C4A | 2SK2157
Keywords - 2SK776 MOSFET datasheet
2SK776 cross reference
2SK776 equivalent finder
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History: PHT4NQ10LT | MMN60NF06 | S85N16RN | FQB7P20TMF085 | BSC011N03LSI | 2N6660C4A | 2SK2157



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