2SK783 Todos los transistores

 ..1. Size:236K  inchange semiconductor
 2sk783.pdf

isc N-Channel MOSFET Transistor 2SK783 FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed especially for high voltage,high speed applications, such as switching power supplies . ABSOLUTE M

 9.1. Size:173K  nec
 2sk787.pdf

 9.2. Size:182K  nec
 2sk786.pdf

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 9.3. Size:158K  nec
 2sk785.pdf

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 2sk784.pdf

 9.5. Size:238K  inchange semiconductor
 2sk788.pdf

isc N-Channel MOSFET Transistor 2SK788 DESCRIPTION Drain Current I =13A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve

 9.6. Size:237K  inchange semiconductor
 2sk787.pdf

isc N-Channel MOSFET Transistor 2SK787 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching power supplies actuater control,and pulse circuits. ABSOLUTE MAXIMUM RATINGS(

 9.7. Size:237K  inchange semiconductor
 2sk789.pdf

isc N-Channel MOSFET Transistor 2SK789 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve