2SK783 Specs and Replacement

Type Designator: 2SK783

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.57 Ohm

Package: TO3PN

2SK783 substitution

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2SK783 datasheet

 ..1. Size:236K  inchange semiconductor
2sk783.pdf pdf_icon

2SK783

isc N-Channel MOSFET Transistor 2SK783 FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed especially for high voltage,high speed applications, such as switching power supplies . ABSOLUTE M... See More ⇒

 9.1. Size:173K  nec
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2SK783

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 9.2. Size:182K  nec
2sk786.pdf pdf_icon

2SK783

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 9.3. Size:158K  nec
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2SK783

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Detailed specifications: 2SK3456-ZJ, 2SK3457, 2SK3458, 2SK3458-S, 2SK3458-ZK, 2SK775, 2SK776, 2SK777, IRF3205, 2SK784, 2SK785, 2SK786, 2SK788, 2SK789, 2SK790, 2SK1377, 2SK1378

Keywords - 2SK783 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs