2SK3676-01S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3676-01S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 195 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: TO263

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2SK3676-01S datasheet

 ..1. Size:357K  inchange semiconductor
 2sk3676-01s.pdf pdf_icon

2SK3676-01S

isc N-Channel MOSFET Transistor 2SK3676-01S FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 0.1. Size:357K  inchange semiconductor
 2sk3676-01sj.pdf pdf_icon

2SK3676-01S

isc N-Channel MOSFET Transistor 2SK3676-01SJ FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 4.1. Size:264K  fuji
 2sk3676-01l-01s-01sj.pdf pdf_icon

2SK3676-01S

2SK3676-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl

 4.2. Size:283K  inchange semiconductor
 2sk3676-01l.pdf pdf_icon

2SK3676-01S

isc N-Channel MOSFET Transistor 2SK3676-01L FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

MOSTRAR MÁS

Otros transistores... 2SK3526-01SJ, 2SK3527-01, 2SK3528-01R, 2SK3529-01, 2SK3531-01, 2SK3539, 2SK3675-01, 2SK3676-01L, IRFP260N, 2SK3676-01SJ, 2SK3678-01, 2SK3680-01, 2SK3681-01, 2SK3682-01, 2SK3684-01L, 2SK3684-01S, 2SK3684-01SJ