2SK3676-01S MOSFET Datasheet: N-Ch, 900V, 6A. Full specification with pinout and replacement list

2SK3676-01S Specs and Replacement

Type Designator: 2SK3676-01S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 195 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 100 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO263

2SK3676-01S substitution

- MOSFET ⓘ Cross-Reference Search

2SK3676-01S datasheet

..1. Size:357K inchange semiconductor
2sk3676-01s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3676-01S FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒

0.1. Size:357K inchange semiconductor
2sk3676-01sj.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3676-01SJ FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s... See More ⇒

4.1. Size:264K fuji
2sk3676-01l-01s-01sj.pdf pdf_icon

2SK3676-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl... See More ⇒

4.2. Size:283K inchange semiconductor
2sk3676-01l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3676-01L FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒

Detailed specifications: 2SK3526-01SJ , 2SK3527-01 , 2SK3528-01R , 2SK3529-01 , 2SK3531-01 , 2SK3539 , 2SK3675-01 , 2SK3676-01L , IRFP260N , 2SK3676-01SJ , 2SK3678-01 , 2SK3680-01 , 2SK3681-01 , 2SK3682-01 , 2SK3684-01L , 2SK3684-01S , 2SK3684-01SJ .