2SK3688-01SJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3688-01SJ Datasheet (PDF)

..1. Size:357K inchange semiconductor
2sk3688-01sj.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3688-01SJFEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.57(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

3.1. Size:357K inchange semiconductor
2sk3688-01s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3688-01SFEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.57(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

4.1. Size:232K fuji
2sk3688-01l-01s-01sj.pdf pdf_icon

2SK3688-01L,S,SJFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesFeatures Outline Drawings [mm]High speed switchingLow on-resistanceNo secondary breadownLow driving powerP4Avalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

4.2. Size:283K inchange semiconductor
2sk3688-01l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3688-01LFEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.57(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

Otros transistores... 2SK3682-01 , 2SK3684-01L , 2SK3684-01S , 2SK3684-01SJ , 2SK3685-01 , 2SK3686-01 , 2SK3688-01L , 2SK3688-01S , K3569 , 2SK3689-01 , 2SK3690-01 , 2SK3691-01MR , 2SK819 , 2SK831 , 2SK833 , 2SK849 , 2SK851 .