2SK3688-01SJ Datasheet. Specs and Replacement

Type Designator: 2SK3688-01SJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 270 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.57 Ohm

Package: TO263

2SK3688-01SJ substitution

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2SK3688-01SJ datasheet

 ..1. Size:357K  inchange semiconductor
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2SK3688-01SJ

isc N-Channel MOSFET Transistor 2SK3688-01SJ FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.57 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s... See More ⇒

 3.1. Size:357K  inchange semiconductor
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2SK3688-01SJ

isc N-Channel MOSFET Transistor 2SK3688-01S FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.57 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒

 4.1. Size:232K  fuji
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2SK3688-01SJ

2SK3688-01L,S,SJ FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching Low on-resistance No secondary breadown Low driving power P4 Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle... See More ⇒

 4.2. Size:283K  inchange semiconductor
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2SK3688-01SJ

isc N-Channel MOSFET Transistor 2SK3688-01L FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.57 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒

Detailed specifications: 2SK3682-01, 2SK3684-01L, 2SK3684-01S, 2SK3684-01SJ, 2SK3685-01, 2SK3686-01, 2SK3688-01L, 2SK3688-01S, IRF9540, 2SK3689-01, 2SK3690-01, 2SK3691-01MR, 2SK819, 2SK831, 2SK833, 2SK849, 2SK851

Keywords - 2SK3688-01SJ MOSFET specs

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