2SK856 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK856

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 45 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 40 nS

Conductancia de drenaje-sustrato (Cd): 1600 pF

Resistencia drenaje-fuente RDS(on): 0.03 Ohm

Empaquetado / Estuche: TO220AB

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2SK856 Datasheet (PDF)

1.1. 2sk856.pdf Size:62K _update

1.2. 2sk856.pdf Size:198K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK856 DESCRIPTION ·Drain Current –I =45A@ T =25℃ D C ·Drain Source Voltage- : V =60V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Dr

5.1. 2sk854.pdf Size:131K _update

5.2. 2sk859.pdf Size:62K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK859 DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VA

5.3. 2sk855.pdf Size:121K _update

5.4. 2sk858.pdf Size:59K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK858 DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VA

5.5. 2sk851.pdf Size:60K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK851 DESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) APPLICATIONS ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 200 V

5.6. 2sk850.pdf Size:57K _toshiba

5.7. 2sk859.pdf Size:203K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK859 DESCRIPTION ·Drain Current –I =9A@ T =25℃ D C ·Drain Source Voltage- : V =500V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIM

5.8. 2sk858.pdf Size:198K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK858 DESCRIPTION ·Drain Current –I =2A@ T =25℃ D C ·Drain Source Voltage- : V =600V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIM

5.9. 2sk857.pdf Size:201K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK857 DESCRIPTION ·Drain Current –I =45A@ T =25℃ D C ·Drain Source Voltage- : V =60V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Dr

5.10. 2sk851.pdf Size:202K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK851 DESCRIPTION ·Drain Current –I =30A@ T =25℃ D C ·Drain Source Voltage- : V =200V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V D

5.11. 2sk850.pdf Size:218K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK850 DESCRIPTION ·Drain Current –I =40A@ T =25℃ D C ·Drain Source Voltage- : V =100V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V D

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

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