2SK856 Datasheet and Replacement
Type Designator: 2SK856
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 1600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO220AB
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2SK856 Datasheet (PDF)
2sk856.pdf

isc N-Channel MOSFET Transistor 2SK856DESCRIPTIONDrain Current I =45A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK349 | AP9926GEO | RW1C020UN | IRF441 | GSM3050S | STL2N80K5 | STD4N62K3
Keywords - 2SK856 MOSFET datasheet
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History: 2SK349 | AP9926GEO | RW1C020UN | IRF441 | GSM3050S | STL2N80K5 | STD4N62K3



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