2SK856 Datasheet. Specs and Replacement
Type Designator: 2SK856
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 1600 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO220AB
2SK856 substitution
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2SK856 datasheet
2sk856.pdf
isc N-Channel MOSFET Transistor 2SK856 DESCRIPTION Drain Current I =45A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr... See More ⇒
Detailed specifications: 2SK3691-01MR, 2SK819, 2SK831, 2SK833, 2SK849, 2SK851, 2SK854, 2SK855, 4435, 2SK858, 2SK859, 2SK867, 2SK867A, 2SK868, 2SK868A, 2SK869, 2SK870
Keywords - 2SK856 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: GSMBSS123 | 2SK869 | GSM9997 | SIHFU110 | GSM9972S | SIHFU014
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