2SK856. Аналоги и основные параметры
Наименование производителя: 2SK856
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 45 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 1600 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
Тип корпуса: TO220AB
Аналог (замена) для 2SK856
- подборⓘ MOSFET транзистора по параметрам
2SK856 даташит
..2. Size:198K inchange semiconductor
2sk856.pdf 
isc N-Channel MOSFET Transistor 2SK856 DESCRIPTION Drain Current I =45A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr
9.4. Size:201K inchange semiconductor
2sk857.pdf 
isc N-Channel MOSFET Transistor 2SK857 DESCRIPTION Drain Current I =45A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr
9.5. Size:60K inchange semiconductor
2sk851.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK851 DESCRIPTION Drain Current ID=30A@ TC=25 Drain Source Voltage- VDSS=200V(Min) APPLICATIONS Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 200 V
9.6. Size:62K inchange semiconductor
2sk859.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK859 DESCRIPTION Drain Current ID=9A@ TC=25 Drain Source Voltage- VDSS=500V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VA
9.7. Size:59K inchange semiconductor
2sk858.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK858 DESCRIPTION Drain Current ID=2A@ TC=25 Drain Source Voltage- VDSS=600V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VA
9.8. Size:218K inchange semiconductor
2sk850.pdf 
isc N-Channel MOSFET Transistor 2SK850 DESCRIPTION Drain Current I =40A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V D
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