2SK859
 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
   Número de Parte: 2SK859
   Tipo de FET: MOSFET
   Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
   Pdⓘ - Máxima disipación de potencia: 125
 W   
|Vds|ⓘ - Voltaje máximo drenador - fuente: 500
 V   
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
 V   
|Id|ⓘ - Corriente continua de drenaje: 9
 A   
Tjⓘ - Temperatura máxima de unión: 150
 °C
CARACTERÍSTICAS ELÉCTRICAS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8
 Ohm
		   Paquete / Cubierta: 
TO3PN
				
				  
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2SK859
 Datasheet (PDF)
 ..1.  Size:62K  inchange semiconductor
 2sk859.pdf 
 
						  
 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK859 DESCRIPTION Drain Current ID=9A@ TC=25 Drain Source Voltage-  : VDSS=500V(Min) APPLICATIONS Designed for high voltage, high speed power switching  applications such as switching regulators, converters,  solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VA
 9.5.  Size:201K  inchange semiconductor
 2sk857.pdf 
 
						  
 
isc N-Channel MOSFET Transistor 2SK857DESCRIPTIONDrain Current I =45A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr
 9.6.  Size:60K  inchange semiconductor
 2sk851.pdf 
 
						  
 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK851 DESCRIPTION Drain Current ID=30A@ TC=25 Drain Source Voltage-  : VDSS=200V(Min) APPLICATIONS Designed for use in switch mode power supplies and general  purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT  ARAMETER V Drain-Source Voltage (V =0) 200 V
 9.7.  Size:198K  inchange semiconductor
 2sk856.pdf 
 
						  
 
isc N-Channel MOSFET Transistor 2SK856DESCRIPTIONDrain Current I =45A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr
 9.8.  Size:59K  inchange semiconductor
 2sk858.pdf 
 
						  
 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK858 DESCRIPTION Drain Current ID=2A@ TC=25 Drain Source Voltage-  : VDSS=600V(Min) APPLICATIONS Designed for high voltage, high speed power switching  applications such as switching regulators, converters,  solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VA
 9.9.  Size:218K  inchange semiconductor
 2sk850.pdf 
 
						  
 
isc N-Channel MOSFET Transistor 2SK850DESCRIPTIONDrain Current I =40A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV D
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