2SK859 Todos los transistores

 

2SK859 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK859

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente |Vds|: 500 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 9 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.8 Ohm

Empaquetado / Estuche: TO3PN

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2SK859 Datasheet (PDF)

0.1. 2sk859.pdf Size:62K _inchange_semiconductor

2SK859
2SK859

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK859 DESCRIPTION Drain Current ID=9A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VA

9.1. 2sk856.pdf Size:62K _toshiba

2SK859
2SK859

9.2. 2sk850.pdf Size:57K _toshiba

2SK859
2SK859

 9.3. 2sk854.pdf Size:131K _nec

2SK859
2SK859

9.4. 2sk855.pdf Size:121K _nec

2SK859
2SK859

 9.5. 2sk856.pdf Size:198K _inchange_semiconductor

2SK859
2SK859

isc N-Channel MOSFET Transistor 2SK856DESCRIPTIONDrain Current I =45A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

9.6. 2sk858.pdf Size:59K _inchange_semiconductor

2SK859
2SK859

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK858 DESCRIPTION Drain Current ID=2A@ TC=25 Drain Source Voltage- : VDSS=600V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VA

9.7. 2sk857.pdf Size:201K _inchange_semiconductor

2SK859
2SK859

isc N-Channel MOSFET Transistor 2SK857DESCRIPTIONDrain Current I =45A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

9.8. 2sk851.pdf Size:60K _inchange_semiconductor

2SK859
2SK859

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK851 DESCRIPTION Drain Current ID=30A@ TC=25 Drain Source Voltage- : VDSS=200V(Min) APPLICATIONS Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 200 V

9.9. 2sk850.pdf Size:218K _inchange_semiconductor

2SK859
2SK859

isc N-Channel MOSFET Transistor 2SK850DESCRIPTIONDrain Current I =40A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV D

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