2SK859 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK859

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 9 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.8 Ohm

Empaquetado / Estuche: TO3PN

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2SK859 Datasheet (PDF)

1.1. 2sk859.pdf Size:62K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK859 DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VA

5.1. 2sk856.pdf Size:62K _update

5.2. 2sk855.pdf Size:121K _update

5.3. 2sk851.pdf Size:60K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK851 DESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) APPLICATIONS ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 200 V

5.4. 2sk854.pdf Size:131K _update

5.5. 2sk858.pdf Size:59K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK858 DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VA

5.6. 2sk850.pdf Size:57K _toshiba