2SK859 Datasheet. Specs and Replacement

Type Designator: 2SK859  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO3PN

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2SK859 datasheet

 ..1. Size:62K  inchange semiconductor
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2SK859

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK859 DESCRIPTION Drain Current ID=9A@ TC=25 Drain Source Voltage- VDSS=500V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VA... See More ⇒

 9.1. Size:62K  toshiba
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2SK859

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2SK859

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2SK859

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Detailed specifications: 2SK831, 2SK833, 2SK849, 2SK851, 2SK854, 2SK855, 2SK856, 2SK858, SKD502T, 2SK867, 2SK867A, 2SK868, 2SK868A, 2SK869, 2SK870, 2SK871, 2SK3987-01L

Keywords - 2SK859 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs