2SK859 Datasheet. Specs and Replacement
Type Designator: 2SK859 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO3PN
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2SK859 datasheet
2sk859.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK859 DESCRIPTION Drain Current ID=9A@ TC=25 Drain Source Voltage- VDSS=500V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VA... See More ⇒
Detailed specifications: 2SK831, 2SK833, 2SK849, 2SK851, 2SK854, 2SK855, 2SK856, 2SK858, SKD502T, 2SK867, 2SK867A, 2SK868, 2SK868A, 2SK869, 2SK870, 2SK871, 2SK3987-01L
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