2SK868 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK868
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 130 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
tonⓘ - Tiempo de encendido: 150 nS
Cossⓘ - Capacitancia de salida: 430 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
Paquete / Cubierta: TO3P
- Selección de transistores por parámetros
2SK868 Datasheet (PDF)
2sk868.pdf

isc N-Channel MOSFET Transistor 2SK868DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
2sk868a.pdf

isc N-Channel MOSFET Transistor 2SK868ADESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rela
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 60N06G-TQ2-T | SQM120P04-04L | CJB08N65 | FQD24N08TF | AP4575GM-HF | AP4506GEM | IRF150B
History: 60N06G-TQ2-T | SQM120P04-04L | CJB08N65 | FQD24N08TF | AP4575GM-HF | AP4506GEM | IRF150B



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