2SK868 Datasheet: MOSFET, N-Ch, 400V, 20A. Full specification with pinout and replacement list

2SK868 Datasheet. Specs and Replacement

Type Designator: 2SK868

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

ton ⓘ - Turn-on Time: 150 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO3P

2SK868 substitution

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2SK868 datasheet

..1. Size:153K panasonic
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isc N-Channel MOSFET Transistor 2SK868 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay... See More ⇒

0.1. Size:203K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK868A DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rela... See More ⇒

9.1. Size:41K panasonic
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