2SK868 Datasheet and Replacement
Type Designator: 2SK868
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
ton ⓘ - Turn-on Time: 150 nS
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO3P
2SK868 substitution
2SK868 Datasheet (PDF)
2sk868.pdf

isc N-Channel MOSFET Transistor 2SK868DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
2sk868a.pdf

isc N-Channel MOSFET Transistor 2SK868ADESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rela
Datasheet: 2SK851 , 2SK854 , 2SK855 , 2SK856 , 2SK858 , 2SK859 , 2SK867 , 2SK867A , RFP50N06 , 2SK868A , 2SK869 , 2SK870 , 2SK871 , 2SK3987-01L , 2SK3987-01S , 2SK3987-01SJ , 2SK3988-01 .
History: ME50P06-G | SWB072R08ET | MS65R190RGE | 2SK871 | MMQ60R115PCTH | RFM10N12
Keywords - 2SK868 MOSFET datasheet
2SK868 cross reference
2SK868 equivalent finder
2SK868 lookup
2SK868 substitution
2SK868 replacement
History: ME50P06-G | SWB072R08ET | MS65R190RGE | 2SK871 | MMQ60R115PCTH | RFM10N12



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