2SK869 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK869

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 120 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 110* nS

Resistencia drenaje-fuente RDS(on): 0.5 Ohm

Empaquetado / Estuche: TO3PN

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2SK869 Datasheet (PDF)

1.1. 2sk869.pdf Size:62K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK869 DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RAT

1.2. 2sk869.pdf Size:204K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK869 DESCRIPTION ·Drain Current –I =15A@ T =25℃ D C ·Drain Source Voltage- : V =500V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.1. 2sk867 2sk867a.pdf Size:41K _update

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5.2. 2sk868 2sk868a.pdf Size:153K _update

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5.3. 2sk867.pdf Size:203K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK867 DESCRIPTION ·Drain Current –I =15A@ T =25℃ D C ·Drain Source Voltage- : V =400V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.4. 2sk867a.pdf Size:203K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK867A DESCRIPTION ·Drain Current –I =15A@ T =25℃ D C ·Drain Source Voltage- : V =450V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rela

5.5. 2sk868.pdf Size:203K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK868 DESCRIPTION ·Drain Current –I =20A@ T =25℃ D C ·Drain Source Voltage- : V =400V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.6. 2sk868a.pdf Size:203K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK868A DESCRIPTION ·Drain Current –I =20A@ T =25℃ D C ·Drain Source Voltage- : V =450V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rela

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