2SK869 Datasheet and Replacement
Type Designator: 2SK869
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
ton ⓘ - Turn-on Time: 110 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO3PN
2SK869 substitution
2SK869 Datasheet (PDF)
2sk869.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK869 DESCRIPTION Drain Current ID=15A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RAT
2sk868.pdf

isc N-Channel MOSFET Transistor 2SK868DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
Datasheet: 2SK855 , 2SK856 , 2SK858 , 2SK859 , 2SK867 , 2SK867A , 2SK868 , 2SK868A , 4435 , 2SK870 , 2SK871 , 2SK3987-01L , 2SK3987-01S , 2SK3987-01SJ , 2SK3988-01 , 2SK3989-01MR , 2SK3990-01L .
History: AP65PN2R6I | HFD2N65S | TMP120N08A | HY13N50T | 4N65KG-TND-R
Keywords - 2SK869 MOSFET datasheet
2SK869 cross reference
2SK869 equivalent finder
2SK869 lookup
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History: AP65PN2R6I | HFD2N65S | TMP120N08A | HY13N50T | 4N65KG-TND-R



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