2SK3650-01SJ Todos los transistores

 

2SK3650-01SJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK3650-01SJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 33 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TO263
 

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2SK3650-01SJ Datasheet (PDF)

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2SK3650-01SJ

isc N-Channel MOSFET Transistor 2SK3650-01SJFEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 3.1. Size:356K  inchange semiconductor
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2SK3650-01SJ

isc N-Channel MOSFET Transistor 2SK3650-01SFEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 4.1. Size:254K  fuji
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2SK3650-01SJ

2SK3650-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsP4Switching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl

 4.2. Size:283K  inchange semiconductor
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2SK3650-01SJ

isc N-Channel MOSFET Transistor 2SK3650-01LFEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

Otros transistores... 2SK3646-01L , 2SK3646-01S , 2SK3646-01SJ , 2SK3647-01 , 2SK3648-01 , 2SK3649-01MR , 2SK3650-01L , 2SK3650-01S , IRF640N , 2SK3651-01R , 2SK1081-01 , 2SK1082-01 , 2SK1102-01MR , 2SK3882-01 , 2SK3883-01 , 2SK3884-01 , 2SK3885-01 .

History: 2SK3507 | SPP04N60S5 | KP784A | UPA1872BGR | NCE70N900F | 2SJ494 | AFN1032

 

 
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