2SK3650-01SJ
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3650-01SJ
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 33
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 200
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07
Ohm
Package:
TO263
2SK3650-01SJ
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3650-01SJ
Datasheet (PDF)
..1. Size:356K inchange semiconductor
2sk3650-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3650-01SJFEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
3.1. Size:356K inchange semiconductor
2sk3650-01s.pdf
isc N-Channel MOSFET Transistor 2SK3650-01SFEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
4.1. Size:254K fuji
2sk3650-01l-s-sj.pdf
2SK3650-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsP4Switching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
4.2. Size:283K inchange semiconductor
2sk3650-01l.pdf
isc N-Channel MOSFET Transistor 2SK3650-01LFEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
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