2SK773 Todos los transistores

 

2SK773 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK773

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 120 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 45 nS

Conductancia de drenaje-sustrato (Cd): 480 pF

Resistencia drenaje-fuente RDS(on): 0.6 Ohm

Empaquetado / Estuche: TO3P

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2SK773 Datasheet (PDF)

1.1. 2sk773.pdf Size:145K _update

2SK773
2SK773



5.1. 2sk774.pdf Size:154K _update

2SK773
2SK773



5.2. 2sk777.pdf Size:39K _update

2SK773



 5.3. 2sk776.pdf Size:38K _update

2SK773



5.4. 2sk775.pdf Size:671K _update

2SK773
2SK773

查询"2SK775"供应商 查询"2SK775"供应商 查询"2SK775"供应商 查询"2SK775"供应商 查询"2SK775"供应商 查询"2SK775"供应商 查询"2SK775"供应商 查询"2SK775"供应商

 5.5. 2sk770.pdf Size:62K _update

2SK773
2SK773

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK770 DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RAT

5.6. 2sk777.pdf Size:238K _update-mosfet

2SK773
2SK773

isc N-Channel MOSFET Transistor 2SK777 DESCRIPTION ·Drain Current –I =10A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, conve

5.7. 2sk770.pdf Size:234K _update-mosfet

2SK773
2SK773

isc N-Channel MOSFET Transistor 2SK770 DESCRIPTION ·Drain Current –I =2A@ T =25℃ D C ·Drain Source Voltage- : V = 600V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, conver

5.8. 2sk771.pdf Size:79K _sanyo

2SK773
2SK773

Ordering number:EN2391 N-Channel Junction Silicon FET 2SK771 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Variable resistors, analog switches, AF amplifier, unit:mm constant-current circuit. 2050A [2SK771] Features 0.4 0.16 Adoption of FBET process. 3 Ultrasmall-sized package permitting sets to be made 0 to 0.1 smaller and slimmer.

5.9. 2sk772.pdf Size:77K _sanyo

2SK773
2SK773

Ordering number:EN2392A N-Channel Junction Silicon FET 2SK772 AF Amplifier Applications Applications Package Dimensions Variable resistors, analog switches, AF amplifier, unit:mm constant-current circuit. 2034A [2SK772] 2.2 4.0 Features Adoption of FBET process. 0.4 0.5 0.4 0.4 1 2 3 1 : Source 1.3 1.3 2 : Gate 3 : Drain 3.0 3.8nom SANYO : SPA Specifications Absolut

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