2SK773 Datasheet and Replacement
Type Designator: 2SK773
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 480 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO3P
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2SK773 Datasheet (PDF)
2sk772.pdf

Ordering number:EN2392AN-Channel Junction Silicon FET2SK772AF Amplifier ApplicationsApplications Package Dimensions Variable resistors, analog switches, AF amplifier,unit:mmconstant-current circuit.2034A[2SK772]2.24.0Features Adoption of FBET process.0.40.50.40.41 2 31 : Source1.3 1.32 : Gate3 : Drain3.03.8nom SANYO : SPASpecificationsAb
2sk771.pdf

Ordering number:EN2391N-Channel Junction Silicon FET2SK771Low-Frequency General-PurposeAmplifier ApplicationsApplications Package Dimensions Variable resistors, analog switches, AF amplifier,unit:mmconstant-current circuit.2050A[2SK771]Features0.40.16 Adoption of FBET process.3 Ultrasmall-sized package permitting sets to be made0 to 0.1smaller and sl
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: KF50N06P | BRF5N60 | P1260AT | IRFR310T | 12N80G-T3P-T | NCEA60ND08S | 2N80L-TF1-T
Keywords - 2SK773 MOSFET datasheet
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History: KF50N06P | BRF5N60 | P1260AT | IRFR310T | 12N80G-T3P-T | NCEA60ND08S | 2N80L-TF1-T



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