2SK773 Datasheet and Replacement
Type Designator: 2SK773
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 480 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO3P
2SK773 substitution
2SK773 Datasheet (PDF)
2sk772.pdf

Ordering number:EN2392AN-Channel Junction Silicon FET2SK772AF Amplifier ApplicationsApplications Package Dimensions Variable resistors, analog switches, AF amplifier,unit:mmconstant-current circuit.2034A[2SK772]2.24.0Features Adoption of FBET process.0.40.50.40.41 2 31 : Source1.3 1.32 : Gate3 : Drain3.03.8nom SANYO : SPASpecificationsAb
2sk771.pdf

Ordering number:EN2391N-Channel Junction Silicon FET2SK771Low-Frequency General-PurposeAmplifier ApplicationsApplications Package Dimensions Variable resistors, analog switches, AF amplifier,unit:mmconstant-current circuit.2050A[2SK771]Features0.40.16 Adoption of FBET process.3 Ultrasmall-sized package permitting sets to be made0 to 0.1smaller and sl
Datasheet: 2SK3778-01 , 2SK3780-01 , 2SK3781-01R , 2SK3788-01 , 2SK3789-01R , 2SK3753-01R , 2SK727 , 2SK770 , STP65NF06 , 2SK774 , 2SK791 , 2SK792 , 2SK794 , 2SK795 , 2SK382 , 2SK351 , 2SK1074 .
History: MMN600DB012B | OSG90R250HF | AUIRF7737L2TR | RU2HE2D | STW48N60M6-4 | PDD3906 | 2SK2054
Keywords - 2SK773 MOSFET datasheet
2SK773 cross reference
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History: MMN600DB012B | OSG90R250HF | AUIRF7737L2TR | RU2HE2D | STW48N60M6-4 | PDD3906 | 2SK2054



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