2SK791 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK791
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 100 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 850 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 55 nS
Cossⓘ - Capacitancia de salida: 120 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de 2SK791 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK791 datasheet
9.5. Size:145K panasonic
2sk795.pdf 
"2SK795" "2SK795"
9.7. Size:197K inchange semiconductor
2sk796a.pdf
isc N-Channel MOSFET Transistor 2SK796A DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
9.8. Size:204K inchange semiconductor
2sk794.pdf
isc N-Channel MOSFET Transistor 2SK794 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
9.9. Size:197K inchange semiconductor
2sk796.pdf
isc N-Channel MOSFET Transistor 2SK796 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
9.10. Size:247K inchange semiconductor
2sk790.pdf
isc N-Channel MOSFET Transistor 2SK790 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve
9.11. Size:237K inchange semiconductor
2sk793.pdf
isc N-Channel MOSFET Transistor 2SK793 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =850V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, convert
Otros transistores... 2SK3781-01R
, 2SK3788-01
, 2SK3789-01R
, 2SK3753-01R
, 2SK727
, 2SK770
, 2SK773
, 2SK774
, IRLB3034
, 2SK792
, 2SK794
, 2SK795
, 2SK382
, 2SK351
, 2SK1074
, 2SK1079
, 2SK1089
.
History: LP2307LT1G
| MCB160N10Y
| SM1A11NSK
| FX6KMJ-06
| 2SK559
| SVS5N70MJ
| 20N3LG-TO251
