2SK791
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK791
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 100
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 850
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 3
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 55
ns
Cossⓘ - Выходная емкость: 120
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 4.5
Ohm
Тип корпуса:
TO220AB
Аналог (замена) для 2SK791
-
подбор ⓘ MOSFET транзистора по параметрам
2SK791
Datasheet (PDF)
9.5. Size:145K panasonic
2sk795.pdf 
"2SK795""2SK795"
9.7. Size:197K inchange semiconductor
2sk796a.pdf 
isc N-Channel MOSFET Transistor 2SK796ADESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
9.8. Size:204K inchange semiconductor
2sk794.pdf 
isc N-Channel MOSFET Transistor 2SK794DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
9.9. Size:197K inchange semiconductor
2sk796.pdf 
isc N-Channel MOSFET Transistor 2SK796DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
9.10. Size:247K inchange semiconductor
2sk790.pdf 
isc N-Channel MOSFET Transistor 2SK790DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve
9.11. Size:237K inchange semiconductor
2sk793.pdf 
isc N-Channel MOSFET Transistor 2SK793DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =850V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, convert
Другие MOSFET... 2SK3781-01R
, 2SK3788-01
, 2SK3789-01R
, 2SK3753-01R
, 2SK727
, 2SK770
, 2SK773
, 2SK774
, 60N06
, 2SK792
, 2SK794
, 2SK795
, 2SK382
, 2SK351
, 2SK1074
, 2SK1079
, 2SK1089
.
History: SSM3K03FE
| AP4575GM-HF
| CM8N80F
| CJB08N65
| IRF6678
| AFP3407AS
