2SK791 Specs and Replacement
Type Designator: 2SK791
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 850 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ -
Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
Package: TO220AB
- MOSFET ⓘ Cross-Reference Search
2SK791 datasheet
9.7. Size:197K inchange semiconductor
2sk796a.pdf 
isc N-Channel MOSFET Transistor 2SK796A DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay... See More ⇒
9.8. Size:204K inchange semiconductor
2sk794.pdf
isc N-Channel MOSFET Transistor 2SK794 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay ... See More ⇒
9.9. Size:197K inchange semiconductor
2sk796.pdf
isc N-Channel MOSFET Transistor 2SK796 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay ... See More ⇒
9.10. Size:247K inchange semiconductor
2sk790.pdf
isc N-Channel MOSFET Transistor 2SK790 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve... See More ⇒
9.11. Size:237K inchange semiconductor
2sk793.pdf
isc N-Channel MOSFET Transistor 2SK793 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =850V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, convert... See More ⇒
Detailed specifications: 2SK3781-01R, 2SK3788-01, 2SK3789-01R, 2SK3753-01R, 2SK727, 2SK770, 2SK773, 2SK774, IRLB3034, 2SK792, 2SK794, 2SK795, 2SK382, 2SK351, 2SK1074, 2SK1079, 2SK1089
Keywords - 2SK791 MOSFET specs
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