2SK795 Todos los transistores

 

2SK795 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK795

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 15 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 25* nS

Conductancia de drenaje-sustrato (Cd): 60 pF

Resistencia drenaje-fuente RDS(on): 5 Ohm

Empaquetado / Estuche: I-TYPE

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2SK795 Datasheet (PDF)

1.1. 2sk795.pdf Size:145K _update

2SK795
2SK795

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5.1. 2sk792.pdf Size:43K _update

2SK795



5.2. 2sk790.pdf Size:229K _update

2SK795
2SK795

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 5.3. 2sk796-a.pdf Size:71K _update

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5.4. 2sk791.pdf Size:101K _update

2SK795



 5.5. 2sk794.pdf Size:43K _update

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5.6. 2sk793.pdf Size:237K _update-mosfet

2SK795
2SK795

isc N-Channel MOSFET Transistor 2SK793 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =850V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, convert

5.7. 2sk790.pdf Size:247K _update-mosfet

2SK795
2SK795

isc N-Channel MOSFET Transistor 2SK790 DESCRIPTION ·Drain Current –I =15A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, conve

5.8. 2sk793.pdf Size:43K _toshiba2

2SK795



5.9. 2sk796a.pdf Size:197K _inchange_semiconductor

2SK795
2SK795

isc N-Channel MOSFET Transistor 2SK796A DESCRIPTION ·Drain Current –I =3A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.10. 2sk796.pdf Size:197K _inchange_semiconductor

2SK795
2SK795

isc N-Channel MOSFET Transistor 2SK796 DESCRIPTION ·Drain Current –I =3A@ T =25℃ D C ·Drain Source Voltage- : V =800V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.11. 2sk794.pdf Size:204K _inchange_semiconductor

2SK795
2SK795

isc N-Channel MOSFET Transistor 2SK794 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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