2SK795
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK795
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 15
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 600
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 2
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
tonⓘ - Tiempo de encendido: 25
nS
Cossⓘ - Capacitancia
de salida: 60
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5
Ohm
Paquete / Cubierta: I-TYPE
Búsqueda de reemplazo de MOSFET 2SK795
2SK795
Datasheet (PDF)
..1. Size:145K panasonic
2sk795.pdf 
"2SK795" "2SK795"
9.7. Size:197K inchange semiconductor
2sk796a.pdf
isc N-Channel MOSFET Transistor 2SK796A DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
9.8. Size:204K inchange semiconductor
2sk794.pdf
isc N-Channel MOSFET Transistor 2SK794 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
9.9. Size:197K inchange semiconductor
2sk796.pdf
isc N-Channel MOSFET Transistor 2SK796 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
9.10. Size:247K inchange semiconductor
2sk790.pdf
isc N-Channel MOSFET Transistor 2SK790 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve
9.11. Size:237K inchange semiconductor
2sk793.pdf
isc N-Channel MOSFET Transistor 2SK793 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =850V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, convert
Otros transistores... 2SK3753-01R
, 2SK727
, 2SK770
, 2SK773
, 2SK774
, 2SK791
, 2SK792
, 2SK794
, AON7403
, 2SK382
, 2SK351
, 2SK1074
, 2SK1079
, 2SK1089
, 2SK1105-R
, 2SK1171
, 2SK1171-01
.
