2SK795. Аналоги и основные параметры
Наименование производителя: 2SK795
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 15 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
ton ⓘ - Время включения: 25 ns
Cossⓘ - Выходная емкость: 60 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: I-TYPE
Аналог (замена) для 2SK795
- подборⓘ MOSFET транзистора по параметрам
2SK795 даташит
..1. Size:145K panasonic
2sk795.pdf 

"2SK795" "2SK795"
9.7. Size:197K inchange semiconductor
2sk796a.pdf 

isc N-Channel MOSFET Transistor 2SK796A DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
9.8. Size:204K inchange semiconductor
2sk794.pdf 

isc N-Channel MOSFET Transistor 2SK794 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
9.9. Size:197K inchange semiconductor
2sk796.pdf 

isc N-Channel MOSFET Transistor 2SK796 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
9.10. Size:247K inchange semiconductor
2sk790.pdf 

isc N-Channel MOSFET Transistor 2SK790 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve
9.11. Size:237K inchange semiconductor
2sk793.pdf 

isc N-Channel MOSFET Transistor 2SK793 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =850V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, convert
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.
History: 2SK293
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