All MOSFET. 2SK795 Datasheet

 

2SK795 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK795
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   tonⓘ - Turn-on Time: 25 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: I-TYPE

 2SK795 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK795 Datasheet (PDF)

 ..1. Size:145K  panasonic
 2sk795.pdf

2SK795 2SK795

"2SK795""2SK795"

 9.1. Size:3136K  1
 2sk799.pdf

2SK795 2SK795

 9.2. Size:43K  toshiba
 2sk794.pdf

2SK795

 9.3. Size:101K  toshiba
 2sk791.pdf

2SK795

 9.4. Size:43K  toshiba
 2sk792.pdf

2SK795

 9.5. Size:43K  toshiba
 2sk793.pdf

2SK795

 9.6. Size:71K  panasonic
 2sk796-a.pdf

2SK795

 9.7. Size:197K  inchange semiconductor
 2sk796a.pdf

2SK795 2SK795

isc N-Channel MOSFET Transistor 2SK796ADESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

 9.8. Size:204K  inchange semiconductor
 2sk794.pdf

2SK795 2SK795

isc N-Channel MOSFET Transistor 2SK794DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

 9.9. Size:197K  inchange semiconductor
 2sk796.pdf

2SK795 2SK795

isc N-Channel MOSFET Transistor 2SK796DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

 9.10. Size:247K  inchange semiconductor
 2sk790.pdf

2SK795 2SK795

isc N-Channel MOSFET Transistor 2SK790DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve

 9.11. Size:237K  inchange semiconductor
 2sk793.pdf

2SK795 2SK795

isc N-Channel MOSFET Transistor 2SK793DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =850V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, convert

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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