2SJ651 Todos los transistores

 

2SJ651 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ651

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 115 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm

Encapsulados: TO220F

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2SJ651 datasheet

 ..1. Size:38K  sanyo
2sj651.pdf pdf_icon

2SJ651

Ordering number EN7501A 2SJ651 P-Channel Silicon MOSFET 2SJ651 DC / DC Converter Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage VGSS 20 V Drain Curr

 9.1. Size:47K  sanyo
2sj652.pdf pdf_icon

2SJ651

Ordering number ENN7625 2SJ652 P-Channl Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2063A 4V drive. [2SJ652] Motor drive, DC / DC converter. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source Specifications 2.

 9.2. Size:33K  sanyo
2sj650.pdf pdf_icon

2SJ651

Ordering number ENN7500 2SJ650 P-Channl Silicon MOSFET 2SJ650 DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2063A 4V drive. [2SJ650] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source Specifications 2.55 2.55 SANYO TO-220ML Absolute Maximum Ratings

 9.3. Size:217K  sanyo
2sj652-1e.pdf pdf_icon

2SJ651

2SJ652 Ordering number EN7625A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ652 Applications Features ON-resistance RDS(on)1=28.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V

Otros transistores... 2SJ174 , 2SJ687 , 2SJ687-ZK , 2SJ690 , 2V7002K , 2V7002L , 2V7002W , 2SJ650 , IRF730 , 2SJ652-1E , 2SJ661-1E , 2SJ661-DL-1E , 2SJ661-DL-E , 2SJ673 , 2SJ683 , 2SJ176 , 2SJ177 .

 

 

 

 

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