2SJ651 MOSFET PDF: P-Ch, 60V, 20A. Datasheet. Full specification with pinout and replacement list

2SJ651 Specs and Replacement

   Type Designator: 2SJ651
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO220F

2SJ651 substitution

- MOSFET ⓘ Cross-Reference Search

2SJ651 datasheet

..1. Size:38K sanyo
2sj651.pdf pdf_icon

Ordering number EN7501A 2SJ651 P-Channel Silicon MOSFET 2SJ651 DC / DC Converter Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage VGSS 20 V Drain Curr... See More ⇒

9.1. Size:47K sanyo
2sj652.pdf pdf_icon

Ordering number ENN7625 2SJ652 P-Channl Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2063A 4V drive. [2SJ652] Motor drive, DC / DC converter. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source Specifications 2.... See More ⇒

9.2. Size:33K sanyo
2sj650.pdf pdf_icon

Ordering number ENN7500 2SJ650 P-Channl Silicon MOSFET 2SJ650 DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2063A 4V drive. [2SJ650] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source Specifications 2.55 2.55 SANYO TO-220ML Absolute Maximum Ratings ... See More ⇒

9.3. Size:217K sanyo
2sj652-1e.pdf pdf_icon

2SJ652 Ordering number EN7625A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ652 Applications Features ON-resistance RDS(on)1=28.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V ... See More ⇒