IRFBG30 Todos los transistores

PD - 94989 IRFBG30PbF Lead-Free 2/9/04 Document Number 91124 www.vishay.com 1 IRFBG30PbF Document Number 91124 www.vishay.com 2 IRFBG30PbF Document Number 91124 www.vishay.com 3 IRFBG30PbF Document Number 91124 www.vishay.com 4 IRFBG30PbF Document Number 91124 www.vishay.com 5 IRFBG30PbF Document Number 91124 www.vishay.com 6 IRFBG30PbF TO-220AB Package Out

IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 5.0 RoHS* Fast Switching Qg (Max.) (nC) 80 COMPLIANT Ease of Paralleling Qgs (nC) 10 Qgd (nC) 42 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 5.0 RoHS* Fast Switching Qg (Max.) (nC) 80 COMPLIANT Ease of Paralleling Qgs (nC) 10 Qgd (nC) 42 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFBG30 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

PD- 95271 IRFBG20PbF Lead-Free 05/20/04 Document Number 91123 www.vishay.com 1 IRFBG20PbF Document Number 91123 www.vishay.com 2 IRFBG20PbF Document Number 91123 www.vishay.com 3 IRFBG20PbF Document Number 91123 www.vishay.com 4 IRFBG20PbF Document Number 91123 www.vishay.com 5 IRFBG20PbF Document Number 91123 www.vishay.com 6 IRFBG20PbF Document Number 9

IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 11 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 4.9 Simple Drive Requirements Qgd (nC) 22 Compliant to RoHS Directive 2002/95/EC Configuration Single D

IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 11 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 4.9 Simple Drive Requirements Qgd (nC) 22 Compliant to RoHS Directive 2002/95/EC Configuration Single D

iscN-Channel MOSFET Transistor IRFBG20 FEATURES Low drain-source on-resistance RDS(ON) = 11 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT