IRFBG30 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFBG30
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET IRFBG30
IRFBG30 Datasheet (PDF)
irfbg30pbf.pdf
PD - 94989IRFBG30PbF Lead-Free2/9/04Document Number: 91124 www.vishay.com1IRFBG30PbFDocument Number: 91124 www.vishay.com2IRFBG30PbFDocument Number: 91124 www.vishay.com3IRFBG30PbFDocument Number: 91124 www.vishay.com4IRFBG30PbFDocument Number: 91124 www.vishay.com5IRFBG30PbFDocument Number: 91124 www.vishay.com6IRFBG30PbFTO-220AB Package Out
irfbg30pbf sihfbg30.pdf
IRFBG30, SiHFBG30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 5.0RoHS* Fast SwitchingQg (Max.) (nC) 80COMPLIANT Ease of ParallelingQgs (nC) 10Qgd (nC) 42 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irfbg30 sihfbg30.pdf
IRFBG30, SiHFBG30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 5.0RoHS* Fast SwitchingQg (Max.) (nC) 80COMPLIANT Ease of ParallelingQgs (nC) 10Qgd (nC) 42 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
irfbg30.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFBG30FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
irfbg20pbf.pdf
PD- 95271IRFBG20PbF Lead-Free05/20/04Document Number: 91123 www.vishay.com1IRFBG20PbFDocument Number: 91123 www.vishay.com2IRFBG20PbFDocument Number: 91123 www.vishay.com3IRFBG20PbFDocument Number: 91123 www.vishay.com4IRFBG20PbFDocument Number: 91123 www.vishay.com5IRFBG20PbFDocument Number: 91123 www.vishay.com6IRFBG20PbFDocument Number: 9
irfbg20pbf sihfbg20.pdf
IRFBG20, SiHFBG20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 11RoHS* Fast SwitchingQg (Max.) (nC) 38 COMPLIANT Ease of ParallelingQgs (nC) 4.9 Simple Drive RequirementsQgd (nC) 22 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD
irfbg20 sihfbg20.pdf
IRFBG20, SiHFBG20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 11RoHS* Fast SwitchingQg (Max.) (nC) 38 COMPLIANT Ease of ParallelingQgs (nC) 4.9 Simple Drive RequirementsQgd (nC) 22 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD
irfbg20.pdf
iscN-Channel MOSFET Transistor IRFBG20FEATURESLow drain-source on-resistance:RDS(ON) = 11 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
Otros transistores... IRFBC42 , IRFBE20 , IRFBE30 , IRFBF20 , IRFBF20L , IRFBF20S , IRFBF30 , IRFBG20 , 2N7000 , IRFBL10N60A , IRFBL12N50A , IRFD014 , IRFD024 , IRFD110 , IRFD120 , IRFD210 , IRFD214 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918