All MOSFET. IRFBG30 Datasheet

 

IRFBG30 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFBG30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80(max) nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO220AB

 IRFBG30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFBG30 Datasheet (PDF)

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Datasheet: IRFBC42 , IRFBE20 , IRFBE30 , IRFBF20 , IRFBF20L , IRFBF20S , IRFBF30 , IRFBG20 , IRFP064N , IRFBL10N60A , IRFBL12N50A , IRFD014 , IRFD024 , IRFD110 , IRFD120 , IRFD210 , IRFD214 .

 

 
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