IRFBG30 Datasheet. Specs and Replacement
Type Designator: IRFBG30 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO220AB
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IRFBG30 substitution
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IRFBG30 datasheet
irfbg30pbf.pdf
PD - 94989 IRFBG30PbF Lead-Free 2/9/04 Document Number 91124 www.vishay.com 1 IRFBG30PbF Document Number 91124 www.vishay.com 2 IRFBG30PbF Document Number 91124 www.vishay.com 3 IRFBG30PbF Document Number 91124 www.vishay.com 4 IRFBG30PbF Document Number 91124 www.vishay.com 5 IRFBG30PbF Document Number 91124 www.vishay.com 6 IRFBG30PbF TO-220AB Package Out... See More ⇒
irfbg30pbf sihfbg30.pdf
IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 5.0 RoHS* Fast Switching Qg (Max.) (nC) 80 COMPLIANT Ease of Paralleling Qgs (nC) 10 Qgd (nC) 42 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D ... See More ⇒
irfbg30 sihfbg30.pdf
IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 5.0 RoHS* Fast Switching Qg (Max.) (nC) 80 COMPLIANT Ease of Paralleling Qgs (nC) 10 Qgd (nC) 42 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D... See More ⇒
Detailed specifications: IRFBC42, IRFBE20, IRFBE30, IRFBF20, IRFBF20L, IRFBF20S, IRFBF30, IRFBG20, IRLB3034, IRFBL10N60A, IRFBL12N50A, IRFD014, IRFD024, IRFD110, IRFD120, IRFD210, IRFD214
Keywords - IRFBG30 MOSFET specs
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