IRFBG30 - Даташиты. Аналоги. Основные параметры

PD - 94989IRFBG30PbF Lead-Free2/9/04Document Number: 91124 www.vishay.com1IRFBG30PbFDocument Number: 91124 www.vishay.com2IRFBG30PbFDocument Number: 91124 www.vishay.com3IRFBG30PbFDocument Number: 91124 www.vishay.com4IRFBG30PbFDocument Number: 91124 www.vishay.com5IRFBG30PbFDocument Number: 91124 www.vishay.com6IRFBG30PbFTO-220AB Package Out

IRFBG30, SiHFBG30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 5.0RoHS* Fast SwitchingQg (Max.) (nC) 80COMPLIANT Ease of ParallelingQgs (nC) 10Qgd (nC) 42 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

IRFBG30, SiHFBG30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 5.0RoHS* Fast SwitchingQg (Max.) (nC) 80COMPLIANT Ease of ParallelingQgs (nC) 10Qgd (nC) 42 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFBG30FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

PD- 95271IRFBG20PbF Lead-Free05/20/04Document Number: 91123 www.vishay.com1IRFBG20PbFDocument Number: 91123 www.vishay.com2IRFBG20PbFDocument Number: 91123 www.vishay.com3IRFBG20PbFDocument Number: 91123 www.vishay.com4IRFBG20PbFDocument Number: 91123 www.vishay.com5IRFBG20PbFDocument Number: 91123 www.vishay.com6IRFBG20PbFDocument Number: 9

IRFBG20, SiHFBG20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 11RoHS* Fast SwitchingQg (Max.) (nC) 38 COMPLIANT Ease of ParallelingQgs (nC) 4.9 Simple Drive RequirementsQgd (nC) 22 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD

IRFBG20, SiHFBG20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 11RoHS* Fast SwitchingQg (Max.) (nC) 38 COMPLIANT Ease of ParallelingQgs (nC) 4.9 Simple Drive RequirementsQgd (nC) 22 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD

iscN-Channel MOSFET Transistor IRFBG20FEATURESLow drain-source on-resistance:RDS(ON) = 11 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT