2SJ476-01L Todos los transistores

 

2SJ476-01L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ476-01L

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 25 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Tiempo de elevación (tr): 80 nS

Conductancia de drenaje-sustrato (Cd): 700 pF

Resistencia drenaje-fuente RDS(on): 0.06 Ohm

Empaquetado / Estuche: TO262

Búsqueda de reemplazo de MOSFET 2SJ476-01L

 

2SJ476-01L Datasheet (PDF)

1.1. 2sj476-01l-s.pdf Size:302K _upd

2SJ476-01L
2SJ476-01L

2SJ476-01L,S FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features T-Pack(L) T-Pack(S) High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier L-type S-type EIAJ Maximum ratings and char

5.1. 2sj477-01mr.pdf Size:293K _upd

2SJ476-01L
2SJ476-01L

2SJ477-01MR FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Features Outline Drawings TO-220F High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum rating

5.2. 2sj473-01l-s.pdf Size:236K _upd

2SJ476-01L
2SJ476-01L

FUJI POWER MOSFET 2SJ473-01L,S P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features K-Pack(L) K-Pack(S) High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier L-type S-type EIAJ Maximum ratings and chara

 5.3. 2sj472-01l-s.pdf Size:243K _upd

2SJ476-01L
2SJ476-01L

FUJI POWER MOSFET 2SJ472-01L,S P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features K-Pack(L) K-Pack(S) High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier L-type S-type EIAJ Maximum ratings and chara

5.4. 2sj475-01.pdf Size:295K _upd

2SJ476-01L
2SJ476-01L

2SJ475-01 FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Features Outline Drawings TO-220AB High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings

 5.5. 2sj474-01l-s.pdf Size:526K _upd

2SJ476-01L
2SJ476-01L

 2SJ474-01L,S FUJI POWER MOSFET Characteristics 2 2SJ474-01L,S FUJI POWER MOSFET 3 2SJ474-01L,S FUJI POWER MOSFET 4

5.6. rej03g0866 2sj479lsds.pdf Size:105K _renesas

2SJ476-01L
2SJ476-01L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.7. 2sj479.pdf Size:92K _renesas

2SJ476-01L
2SJ476-01L

2SJ479(L), 2SJ479(S) Silicon P Channel MOS FET REJ03G0866-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 25 m? typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (L) ) (Package name: LDPAK (S)-(1) ) D 4 4 1.

5.8. 2sj471.pdf Size:48K _hitachi

2SJ476-01L
2SJ476-01L

2SJ471 Silicon P Channel DVL MOS FET High Speed Power Switching ADE-208-540 1st. Edition Features Low on-resistance RDS(on) = 25 m? typ. 4V gate drive devices. High speed switching Outline TO220CFM D G 1 2 3 1. Gate 2. Drain S 3. Source 2SJ471 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


2SJ476-01L
  2SJ476-01L
  2SJ476-01L
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: US6U37 | US6M2 | US6M11 | US6M1 | US6K4 | US6K2 | US6K1 | US6J11 | US5U38 | US5U35 | US5U30 | US5U3 | US5U29TR | US5U2 | US5U1 |

 

 

 
Back to Top