All MOSFET. 2SJ476-01L Datasheet

 

2SJ476-01L MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SJ476-01L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Maximum Power Dissipation (Pd): 50 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 25 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 80 nS
   Drain-Source Capacitance (Cd): 700 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm
   Package: TO262

 2SJ476-01L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ476-01L Datasheet (PDF)

 0.1. Size:302K  fuji
2sj476-01l-s.pdf

2SJ476-01L
2SJ476-01L

2SJ476-01L,SFUJI POWER MOSFETP-CHANNEL SILICON POWER MOSFETFAP-III SERIESOutline DrawingsFeaturesT-Pack(L)T-Pack(S)High speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierL-typeS-typeEIAJMaximum ratings and char

 9.1. Size:92K  renesas
2sj479.pdf

2SJ476-01L
2SJ476-01L

2SJ479(L), 2SJ479(S) Silicon P Channel MOS FET REJ03G0866-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 25 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK (L) ) (Package name: LDPAK (S)-(1) )D

 9.2. Size:105K  renesas
rej03g0866 2sj479lsds.pdf

2SJ476-01L
2SJ476-01L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:295K  fuji
2sj475-01.pdf

2SJ476-01L
2SJ476-01L

2SJ475-01FUJI POWER MOSFETP-CHANNEL SILICON POWER MOSFETFAP-III SERIESFeaturesOutline DrawingsTO-220ABHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings

 9.4. Size:526K  fuji
2sj474-01l-s.pdf

2SJ476-01L
2SJ476-01L

2SJ474-01L,SFUJI POWER MOSFETCharacteristics22SJ474-01L,SFUJI POWER MOSFET32SJ474-01L,SFUJI POWER MOSFET4

 9.5. Size:236K  fuji
2sj473-01l-s.pdf

2SJ476-01L
2SJ476-01L

FUJI POWER MOSFET2SJ473-01L,SP-CHANNEL SILICON POWER MOSFETFAP-III SERIESOutline DrawingsFeaturesK-Pack(L)K-Pack(S)High speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierL-type S-typeEIAJMaximum ratings and chara

 9.6. Size:293K  fuji
2sj477-01mr.pdf

2SJ476-01L
2SJ476-01L

2SJ477-01MRFUJI POWER MOSFETP-CHANNEL SILICON POWER MOSFETFAP-III SERIESFeaturesOutline DrawingsTO-220FHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum rating

 9.7. Size:243K  fuji
2sj472-01l-s.pdf

2SJ476-01L
2SJ476-01L

FUJI POWER MOSFET2SJ472-01L,SP-CHANNEL SILICON POWER MOSFETFAP-III SERIESOutline DrawingsFeaturesK-Pack(L)K-Pack(S)High speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierL-type S-typeEIAJMaximum ratings and chara

 9.8. Size:48K  hitachi
2sj471.pdf

2SJ476-01L
2SJ476-01L

2SJ471Silicon P Channel DVL MOS FETHigh Speed Power SwitchingADE-208-5401st. EditionFeatures Low on-resistanceRDS(on) = 25 m typ. 4V gate drive devices. High speed switchingOutlineTO220CFMDG1231. Gate2. DrainS 3. Source2SJ471Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 30 VGate to

 9.9. Size:257K  inchange semiconductor
2sj477-01mr.pdf

2SJ476-01L
2SJ476-01L

Isc P-Channel MOSFET Transistor 2SJ477-01MRFEATURESWith TO-220F packageLow input capacitance and gate chargesLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top