2SJ476-01L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SJ476-01L
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 50 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 25 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 80 ns
Выходная емкость (Cd): 700 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.06 Ohm
Тип корпуса: TO262
Аналог (замена) для 2SJ476-01L
2SJ476-01L Datasheet (PDF)
2sj476-01l-s.pdf
2SJ476-01L,SFUJI POWER MOSFETP-CHANNEL SILICON POWER MOSFETFAP-III SERIESOutline DrawingsFeaturesT-Pack(L)T-Pack(S)High speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierL-typeS-typeEIAJMaximum ratings and char
2sj479.pdf
2SJ479(L), 2SJ479(S) Silicon P Channel MOS FET REJ03G0866-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 25 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK (L) ) (Package name: LDPAK (S)-(1) )D
rej03g0866 2sj479lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj475-01.pdf
2SJ475-01FUJI POWER MOSFETP-CHANNEL SILICON POWER MOSFETFAP-III SERIESFeaturesOutline DrawingsTO-220ABHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings
2sj474-01l-s.pdf
2SJ474-01L,SFUJI POWER MOSFETCharacteristics22SJ474-01L,SFUJI POWER MOSFET32SJ474-01L,SFUJI POWER MOSFET4
2sj473-01l-s.pdf
FUJI POWER MOSFET2SJ473-01L,SP-CHANNEL SILICON POWER MOSFETFAP-III SERIESOutline DrawingsFeaturesK-Pack(L)K-Pack(S)High speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierL-type S-typeEIAJMaximum ratings and chara
2sj477-01mr.pdf
2SJ477-01MRFUJI POWER MOSFETP-CHANNEL SILICON POWER MOSFETFAP-III SERIESFeaturesOutline DrawingsTO-220FHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum rating
2sj472-01l-s.pdf
FUJI POWER MOSFET2SJ472-01L,SP-CHANNEL SILICON POWER MOSFETFAP-III SERIESOutline DrawingsFeaturesK-Pack(L)K-Pack(S)High speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierL-type S-typeEIAJMaximum ratings and chara
2sj471.pdf
2SJ471Silicon P Channel DVL MOS FETHigh Speed Power SwitchingADE-208-5401st. EditionFeatures Low on-resistanceRDS(on) = 25 m typ. 4V gate drive devices. High speed switchingOutlineTO220CFMDG1231. Gate2. DrainS 3. Source2SJ471Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 30 VGate to
2sj477-01mr.pdf
Isc P-Channel MOSFET Transistor 2SJ477-01MRFEATURESWith TO-220F packageLow input capacitance and gate chargesLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
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