AOC3860 Todos los transistores

 

AOC3860 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOC3860

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm

Encapsulados: ALPHADFN3.05X1.77

 Búsqueda de reemplazo de AOC3860 MOSFET

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AOC3860 datasheet

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 aoc3860.pdf pdf_icon

AOC3860

AOC3860 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 0.1. Size:699K  aosemi
 aoc3860a.pdf pdf_icon

AOC3860

AOC3860A 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

 0.2. Size:766K  aosemi
 aoc3860c.pdf pdf_icon

AOC3860

AOC3860C 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 8.1. Size:469K  aosemi
 aoc3864.pdf pdf_icon

AOC3860

AOC3864 20V Common-Drain Dual N-Channel AlphaMOS General Description Product Summary VSS Trench Power AlphaMOS ( MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V)

MOSTRAR MÁS

Otros transistores... AOB2146L , AOB2502L , AOB2904 , AOB2906 , AOB9N70L , AOC2804B , AOC2870 , AOC2874 , K3569 , AOC3862 , AOC3864 , AOC3868 , AOC3870 , AOD409G , AOD424G , AOD442G , AOD522P .

History: WMK26N65C4 | MCS2305B | SM3424NHQA | SI2301ADS-T1

 

 

 

 

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