All MOSFET. AOC3860 Datasheet

 

AOC3860 Datasheet and Replacement


   Type Designator: AOC3860
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: ALPHADFN3.05X1.77
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AOC3860 Datasheet (PDF)

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AOC3860

AOC386012V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 0.1. Size:699K  aosemi
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AOC3860

AOC3860A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

 0.2. Size:766K  aosemi
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AOC3860

AOC3860C12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 8.1. Size:469K  aosemi
 aoc3864.pdf pdf_icon

AOC3860

AOC386420V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V)

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History: CHM85A3PAGP | TK7P65W | SFFX054Z

Keywords - AOC3860 MOSFET datasheet

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