AOC3860 Datasheet and Replacement
Type Designator: AOC3860
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 30 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
Package: ALPHADFN3.05X1.77
AOC3860 substitution
AOC3860 Datasheet (PDF)
aoc3860.pdf

AOC386012V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc3860a.pdf

AOC3860A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
aoc3860c.pdf

AOC3860C12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc3864.pdf

AOC386420V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V)
Datasheet: AOB2146L , AOB2502L , AOB2904 , AOB2906 , AOB9N70L , AOC2804B , AOC2870 , AOC2874 , 12N60 , AOC3862 , AOC3864 , AOC3868 , AOC3870 , AOD409G , AOD424G , AOD442G , AOD522P .
History: FDZ375P | STL70N10F3 | 2SK538 | 2SK3541MGP | SFS12R08PNF | NTHS4101PT1G
Keywords - AOC3860 MOSFET datasheet
AOC3860 cross reference
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History: FDZ375P | STL70N10F3 | 2SK538 | 2SK3541MGP | SFS12R08PNF | NTHS4101PT1G



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