AOC3868 Todos los transistores

 

AOC3868 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOC3868
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: ALPHADFN2.7X1.81A
 

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AOC3868 Datasheet (PDF)

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AOC3868

AOC386812V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 8.1. Size:699K  aosemi
 aoc3860a.pdf pdf_icon

AOC3868

AOC3860A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

 8.2. Size:469K  aosemi
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AOC3868

AOC386420V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V)

 8.3. Size:324K  aosemi
 aoc3862.pdf pdf_icon

AOC3868

AOC386212V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

MOSTRAR MÁS

Otros transistores... AOB2906 , AOB9N70L , AOC2804B , AOC2870 , AOC2874 , AOC3860 , AOC3862 , AOC3864 , SPP20N60C3 , AOC3870 , AOD409G , AOD424G , AOD442G , AOD522P , AOD558 , AOD607A , AOD661 .

 

 
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