All MOSFET. AOC3868 Datasheet

 

AOC3868 Datasheet and Replacement


   Type Designator: AOC3868
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: ALPHADFN2.7X1.81A
 

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AOC3868 Datasheet (PDF)

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AOC3868

AOC386812V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 8.1. Size:699K  aosemi
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AOC3868

AOC3860A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

 8.2. Size:469K  aosemi
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AOC3868

AOC386420V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V)

 8.3. Size:324K  aosemi
 aoc3862.pdf pdf_icon

AOC3868

AOC386212V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

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Datasheet: AOB2906 , AOB9N70L , AOC2804B , AOC2870 , AOC2874 , AOC3860 , AOC3862 , AOC3864 , IRF9540N , AOC3870 , AOD409G , AOD424G , AOD442G , AOD522P , AOD558 , AOD607A , AOD661 .

History: AO4264C | AOI600A70R

Keywords - AOC3868 MOSFET datasheet

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