AOC3868 MOSFET Datasheet: N-Ch, 12V, 20A. Full specification with pinout and replacement list

AOC3868 Specs and Replacement

Type Designator: AOC3868

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 20 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: ALPHADFN2.7X1.81A

AOC3868 substitution

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AOC3868 datasheet

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AOC3868 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOC3860A 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V) ... See More ⇒

8.2. Size:469K aosemi
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AOC3864 20V Common-Drain Dual N-Channel AlphaMOS General Description Product Summary VSS Trench Power AlphaMOS ( MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V) ... See More ⇒

8.3. Size:324K aosemi
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AOC3862 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒