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AOC3870 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOC3870

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm

Encapsulados: ALPHADFN3.01X1.52 10

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AOC3870 datasheet

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AOC3870

AOC3870 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

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AOC3870

AOC3870A 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

 0.2. Size:793K  aosemi
aoc3870c.pdf pdf_icon

AOC3870

AOC3870C 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

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aoc3878.pdf pdf_icon

AOC3870

AOC3878 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

Otros transistores... AOB9N70L , AOC2804B , AOC2870 , AOC2874 , AOC3860 , AOC3862 , AOC3864 , AOC3868 , SKD502T , AOD409G , AOD424G , AOD442G , AOD522P , AOD558 , AOD607A , AOD661 , AOD294A .

History: WML071N15HG2

 

 

 


History: WML071N15HG2

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