AOC3870 Todos los transistores

 

AOC3870 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOC3870
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: ALPHADFN3.01X1.52 10
 

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AOC3870 Datasheet (PDF)

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AOC3870

AOC387012V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

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AOC3870

AOC3870A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

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AOC3870

AOC3870C12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

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AOC3870

AOC387812V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

MOSTRAR MÁS

Otros transistores... AOB9N70L , AOC2804B , AOC2870 , AOC2874 , AOC3860 , AOC3862 , AOC3864 , AOC3868 , IRF9540N , AOD409G , AOD424G , AOD442G , AOD522P , AOD558 , AOD607A , AOD661 , AOD294A .

History: AFP4435 | AP4085G | 2SK762 | HFH18N50S | IRF6217PBF | SI8472DB | ZXMP3A16DN8

 

 
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