AOC3870 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOC3870
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
Paquete / Cubierta: ALPHADFN3.01X1.52 10
Búsqueda de reemplazo de AOC3870 MOSFET
AOC3870 Datasheet (PDF)
aoc3870.pdf

AOC387012V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc3870a.pdf

AOC3870A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
aoc3870c.pdf

AOC3870C12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc3878.pdf

AOC387812V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
Otros transistores... AOB9N70L , AOC2804B , AOC2870 , AOC2874 , AOC3860 , AOC3862 , AOC3864 , AOC3868 , SPP20N60C3 , AOD409G , AOD424G , AOD442G , AOD522P , AOD558 , AOD607A , AOD661 , AOD294A .
History: APT5014SLLG | 2SK3914-01
History: APT5014SLLG | 2SK3914-01



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