AOC3870 Datasheet and Replacement
Type Designator: AOC3870
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 25 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: ALPHADFN3.01X1.52 10
AOC3870 substitution
AOC3870 Datasheet (PDF)
aoc3870.pdf

AOC387012V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc3870a.pdf

AOC3870A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
aoc3870c.pdf

AOC3870C12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc3878.pdf

AOC387812V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
Datasheet: AOB9N70L , AOC2804B , AOC2870 , AOC2874 , AOC3860 , AOC3862 , AOC3864 , AOC3868 , IRF9540N , AOD409G , AOD424G , AOD442G , AOD522P , AOD558 , AOD607A , AOD661 , AOD294A .
History: IXFN100N10S3 | IXFN360N15T2 | ME55N06A | APT8043SFLLG | 2SK2770-01 | 2SK2003-01M | DE275X2-102N06A
Keywords - AOC3870 MOSFET datasheet
AOC3870 cross reference
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History: IXFN100N10S3 | IXFN360N15T2 | ME55N06A | APT8043SFLLG | 2SK2770-01 | 2SK2003-01M | DE275X2-102N06A



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