AON6232A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AON6232A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 113.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 835 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0029 Ohm
   Paquete / Cubierta: DFN5X6

Búsqueda de reemplazo de MOSFET AON6232A

AON6232A Datasheet (PDF)

..1. Size:237K aosemi
aon6232a.pdf

AON6232A40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

7.1. Size:344K aosemi
aon6232.pdf

AON623240V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6232 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are

8.1. Size:323K 1
aon6234.pdf

AON623440V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6234 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are

8.2. Size:637K 1
aon6236.pdf

AON623640V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6236 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 30Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

8.3. Size:248K aosemi
aon6230.pdf

AON623040V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6230 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

8.4. Size:327K aosemi
aon6234.pdf