AON6232A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6232A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 113.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 835 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0029 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de AON6232A MOSFET
AON6232A Datasheet (PDF)
aon6232a.pdf

AON6232A40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
aon6232.pdf

AON623240V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6232 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are
aon6234.pdf

AON623440V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6234 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are
aon6236.pdf

AON623640V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6236 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 30Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
Otros transistores... AON6154 , AON6156 , AON6160 , AON6162 , AON6224 , AON6220 , AON6224A , AON6226 , 60N06 , AON6262E , AON6264E , AON6266E , AON6268 , AON6276 , AON6284A , AON6312 , AON6314 .
History: IRF640 | CEM4953 | AOL1704 | HUF75617D3 | IXFK520N075T2 | 2N7120
History: IRF640 | CEM4953 | AOL1704 | HUF75617D3 | IXFK520N075T2 | 2N7120



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