AON6232A Todos los transistores

 

AON6232A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6232A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 113.5 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 85 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Tiempo de elevación (tr): 21 nS

Conductancia de drenaje-sustrato (Cd): 835 pF

Resistencia drenaje-fuente RDS(on): 0.0029 Ohm

Empaquetado / Estuche: DFN5x6

Búsqueda de reemplazo de MOSFET AON6232A

 

AON6232A Datasheet (PDF)

1.1. aon6232a.pdf Size:237K _aosemi

AON6232A
AON6232A

AON6232A 40V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology 40V • Low RDS(ON) ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 2.9mΩ • Optimized for fast-switching applications RDS(ON) (at VGS=4.5V) < 4.2mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters

3.1. aon6232.pdf Size:344K _aosemi

AON6232A
AON6232A

AON6232 40V N-Channel MOSFET General Description Product Summary VDS The AON6232 uses trench MOSFET technology that is 40V uniquely optimized to provide the most efficient high 85A ID (at VGS=10V) frequency switching performance.Power losses are < 2.5mΩ RDS(ON) (at VGS=10V) minimized due to an extremely low combination of < 3.6mΩ RDS(ON) (at VGS = 4.5V) RDS(ON) and Crss.I

 4.1. aon6234.pdf Size:327K _aosemi

AON6232A
AON6232A

AON6234 40V N-Channel MOSFET General Description Product Summary VDS The AON6234 uses trench MOSFET technology that is 40V uniquely optimized to provide the most efficient high 85A ID (at VGS=10V) frequency switching performance.Power losses are < 3.4mΩ RDS(ON) (at VGS=10V) minimized due to an extremely low combination of < 5.0mΩ RDS(ON) (at VGS = 4.5V) RDS(ON) and Crss.I

4.2. aon6230.pdf Size:248K _aosemi

AON6232A
AON6232A

AON6230 40V N-Channel MOSFET General Description Product Summary VDS The AON6230 uses trench MOSFET technology that is 40V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 1.44mΩ switching power losses are minimized due to an RDS(ON) (at VGS=4.5V) < 2.1mΩ extremely low combinat

 4.3. aon6236.pdf Size:273K _aosemi

AON6232A
AON6232A

AON6236 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON6236 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 30A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 7mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 10.5mΩ RDS(ON) and Crss.In add

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