All MOSFET. AON6232A Datasheet

 

AON6232A MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON6232A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 113.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 835 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: DFN5X6

 AON6232A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON6232A Datasheet (PDF)

 ..1. Size:237K  aosemi
aon6232a.pdf

AON6232A AON6232A

AON6232A40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 7.1. Size:344K  aosemi
aon6232.pdf

AON6232A AON6232A

AON623240V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6232 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are

 8.1. Size:323K  1
aon6234.pdf

AON6232A AON6232A

AON623440V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6234 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are

 8.2. Size:637K  1
aon6236.pdf

AON6232A AON6232A

AON623640V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6236 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 30Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 8.3. Size:248K  aosemi
aon6230.pdf

AON6232A AON6232A

AON623040V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6230 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.4. Size:327K  aosemi
aon6234.pdf

AON6232A AON6232A

AON623440V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6234 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are

 8.5. Size:273K  aosemi
aon6236.pdf

AON6232A AON6232A

AON623640V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6236 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 30Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PMN40LN | 2SK1993

 

 
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