AON6312
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6312
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 85
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17
nS
Cossⓘ - Capacitancia
de salida: 875
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00185
Ohm
Paquete / Cubierta: DFN5X6EP2
Búsqueda de reemplazo de AON6312
MOSFET
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Selección ⓘ de transistores por parámetros
AON6312
Datasheet (PDF)
..1. Size:261K aosemi
aon6312.pdf 
AON631230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 130A Low Gate Charge RDS(ON) (at VGS=10V)
8.1. Size:359K aosemi
aon6314.pdf
AON631430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.1. Size:346K 1
aon6354.pdf
AON635430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:339K 1
aon6382.pdf
AON638230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.3. Size:368K 1
aon6380.pdf
AON638030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 24A Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:615K 1
aon6324.pdf
AON632430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.5. Size:346K aosemi
aon6354.pdf
AON635430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)
9.6. Size:261K aosemi
aon6370.pdf
AON637030V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 47A Low Gate Charge RDS(ON) (at VGS=10V)
9.7. Size:459K aosemi
aon6362.pdf
AON636230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 60A Low Gate Charge RDS(ON) (at VGS=10V)
9.8. Size:339K aosemi
aon6382.pdf
AON638230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.9. Size:268K aosemi
aon6360.pdf
AON636030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (enhanced MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.10. Size:265K aosemi
aon6368.pdf
AON636830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 52A Low Gate Charge RDS(ON) (at VGS=10V)
9.11. Size:344K aosemi
aon6384.pdf
AON638430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)
9.12. Size:259K aosemi
aon6372.pdf
AON637230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 47A Low Gate Charge RDS(ON) (at VGS=10V)
9.13. Size:344K aosemi
aon6358.pdf
AON635830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.14. Size:368K aosemi
aon6380.pdf
AON638030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 24A Low Gate Charge RDS(ON) (at VGS=10V)
9.15. Size:362K aosemi
aon6366e.pdf
AON6366E30V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 34A Optimized for load switch RDS(ON) (at VGS=10V)
9.16. Size:352K aosemi
aon6324.pdf
AON632430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
Otros transistores... AON6226
, AON6232A
, AON6262E
, AON6264E
, AON6266E
, AON6268
, AON6276
, AON6284A
, MMIS60R580P
, AON6314
, AON6354
, AON6358
, AON6360
, AON6362
, AON6366E
, AON6368
, AON6370
.
