AON6312 Datasheet. Specs and Replacement

Type Designator: AON6312

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 875 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00185 Ohm

Package: DFN5X6EP2

AON6312 substitution

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AON6312 datasheet

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AON6312

AON6312 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 130A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AON6312

AON6314 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AON6312

AON6354 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AON6312

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Detailed specifications: AON6226, AON6232A, AON6262E, AON6264E, AON6266E, AON6268, AON6276, AON6284A, MMIS60R580P, AON6314, AON6354, AON6358, AON6360, AON6362, AON6366E, AON6368, AON6370

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs