IRFD9024 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFD9024
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.6 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 68 nS
Cossⓘ - Capacitancia de salida: 360 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Paquete / Cubierta: HD-1
Búsqueda de reemplazo de MOSFET IRFD9024
IRFD9024 Datasheet (PDF)
irfd9024pbf.pdf
PD- 95922IRFD9024PbF Lead-Free10/27/04Document Number: 91137 www.vishay.com1IRFD9024PbFDocument Number: 91137 www.vishay.com2IRFD9024PbFDocument Number: 91137 www.vishay.com3IRFD9024PbFDocument Number: 91137 www.vishay.com4IRFD9024PbFDocument Number: 91137 www.vishay.com5IRFD9024PbFDocument Number: 91137 www.vishay.com6IRFD9024PbFPeak Diode R
irfd9024 sihfd9024.pdf
IRFD9024, SiHFD9024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.28 For Automatic InsertionRoHS*Qg (Max.) (nC) 19COMPLIANT End StackableQgs (nC) 5.4 P-ChannelQgd (nC) 11 Fast SwitchingConfiguration Single 175 C Operating Temperature
irfd9024pbf sihfd9024.pdf
IRFD9024, SiHFD9024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.28 For Automatic InsertionRoHS*Qg (Max.) (nC) 19COMPLIANT End StackableQgs (nC) 5.4 P-ChannelQgd (nC) 11 Fast SwitchingConfiguration Single 175 C Operating Temperature
irfd9020.pdf
PD- 90462IRFD9020www.irf.com 106/09/05IRFD90202 www.irf.comIRFD9020www.irf.com 3IRFD90204 www.irf.comIRFD9020www.irf.com 5IRFD90206 www.irf.comIRFD9020Peak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+- +- dv/dt controlled by RG
irfd9020pbf.pdf
IRFD9020, SiHFD9020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dv/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.28RoHS* For Automatic InsertionQg (Max.) (nC) 19COMPLIANT End StackableQgs (nC) 5.4 P-ChannelQgd (nC) 11 175 C Opertaing TemperatureConfiguration Single Fast Switching
irfd9014pbf.pdf
PD- 95925IRFD9014PbF Lead-Free10/27/04Document Number: 91136 www.vishay.com1IRFD9014PbFDocument Number: 91136 www.vishay.com2IRFD9014PbFDocument Number: 91136 www.vishay.com3IRFD9014PbFDocument Number: 91136 www.vishay.com4IRFD9014PbFDocument Number: 91136 www.vishay.com5IRFD9014PbFDocument Number: 91136 www.vishay.com6IRFD9014PbFPeak Diode R
irfd9014pbf sihfd9014.pdf
IRFD9014, SiHFD9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.50 For Automatic InsertionRoHS*Qg (Max.) (nC) 12COMPLIANT End StackableQgs (nC) 3.8 P-ChannelQgd (nC) 5.1 175 C Operating TemperatureConfiguration Single Fast Switchin
irfd9010pbf sihfd9010.pdf
IRFD9010, SiHFD9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) - 50 Compact, End Stackable Fast SwitchingRDS(on) ()VGS = - 10 V 0.50 Low Drive CurrentQg (Max.) (nC) 11 Easy ParalleledQgs (nC) 3.8 Excellent Temperature StabilityQgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
sihfd9010 irfd9010.pdf
IRFD9010, SiHFD9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) - 50 Compact, End Stackable Fast SwitchingRDS(on) ()VGS = - 10 V 0.50 Low Drive CurrentQg (Max.) (nC) 11 Easy ParalleledQgs (nC) 3.8 Excellent Temperature StabilityQgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
irfd9014 sihfd9014.pdf
IRFD9014, SiHFD9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.50 For Automatic InsertionRoHS*Qg (Max.) (nC) 12COMPLIANT End StackableQgs (nC) 3.8 P-ChannelQgd (nC) 5.1 175 C Operating TemperatureConfiguration Single Fast Switchin
Otros transistores... IRFD210 , IRFD214 , IRFD220 , IRFD224 , IRFD310 , IRFD320 , IRFD420 , IRFD9014 , IRF3205 , IRFD9110 , IRFD9120 , IRFD9210 , IRFD9220 , IRFDC20 , IRFE024 , IRFE110 , IRFE120 .
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Recientemente añadidas las descripciónes de los transistores:
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