IRFD9024 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFD9024
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 1.6
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 68
nS
Cossⓘ - Capacitancia
de salida: 360
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28
Ohm
Paquete / Cubierta: HD-1
Búsqueda de reemplazo de IRFD9024 MOSFET
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Selección ⓘ de transistores por parámetros
IRFD9024 datasheet
..1. Size:1837K international rectifier
irfd9024pbf.pdf 
PD- 95922 IRFD9024PbF Lead-Free 10/27/04 Document Number 91137 www.vishay.com 1 IRFD9024PbF Document Number 91137 www.vishay.com 2 IRFD9024PbF Document Number 91137 www.vishay.com 3 IRFD9024PbF Document Number 91137 www.vishay.com 4 IRFD9024PbF Document Number 91137 www.vishay.com 5 IRFD9024PbF Document Number 91137 www.vishay.com 6 IRFD9024PbF Peak Diode R
..3. Size:1688K vishay
irfd9024 sihfd9024.pdf 
IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.28 For Automatic Insertion RoHS* Qg (Max.) (nC) 19 COMPLIANT End Stackable Qgs (nC) 5.4 P-Channel Qgd (nC) 11 Fast Switching Configuration Single 175 C Operating Temperature
..4. Size:1690K vishay
irfd9024pbf sihfd9024.pdf 
IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.28 For Automatic Insertion RoHS* Qg (Max.) (nC) 19 COMPLIANT End Stackable Qgs (nC) 5.4 P-Channel Qgd (nC) 11 Fast Switching Configuration Single 175 C Operating Temperature
7.1. Size:266K international rectifier
irfd9020.pdf 
PD- 90462 IRFD9020 www.irf.com 1 06/09/05 IRFD9020 2 www.irf.com IRFD9020 www.irf.com 3 IRFD9020 4 www.irf.com IRFD9020 www.irf.com 5 IRFD9020 6 www.irf.com IRFD9020 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + - + - dv/dt controlled by RG
7.2. Size:1033K vishay
irfd9020pbf.pdf 
IRFD9020, SiHFD9020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dv/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.28 RoHS* For Automatic Insertion Qg (Max.) (nC) 19 COMPLIANT End Stackable Qgs (nC) 5.4 P-Channel Qgd (nC) 11 175 C Opertaing Temperature Configuration Single Fast Switching
8.2. Size:1819K international rectifier
irfd9014pbf.pdf 
PD- 95925 IRFD9014PbF Lead-Free 10/27/04 Document Number 91136 www.vishay.com 1 IRFD9014PbF Document Number 91136 www.vishay.com 2 IRFD9014PbF Document Number 91136 www.vishay.com 3 IRFD9014PbF Document Number 91136 www.vishay.com 4 IRFD9014PbF Document Number 91136 www.vishay.com 5 IRFD9014PbF Document Number 91136 www.vishay.com 6 IRFD9014PbF Peak Diode R
8.4. Size:1751K vishay
irfd9014pbf sihfd9014.pdf 
IRFD9014, SiHFD9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.50 For Automatic Insertion RoHS* Qg (Max.) (nC) 12 COMPLIANT End Stackable Qgs (nC) 3.8 P-Channel Qgd (nC) 5.1 175 C Operating Temperature Configuration Single Fast Switchin
8.5. Size:131K vishay
irfd9010pbf sihfd9010.pdf 
IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) - 50 Compact, End Stackable Fast Switching RDS(on) ( )VGS = - 10 V 0.50 Low Drive Current Qg (Max.) (nC) 11 Easy Paralleled Qgs (nC) 3.8 Excellent Temperature Stability Qgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
8.6. Size:129K vishay
sihfd9010 irfd9010.pdf 
IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) - 50 Compact, End Stackable Fast Switching RDS(on) ( )VGS = - 10 V 0.50 Low Drive Current Qg (Max.) (nC) 11 Easy Paralleled Qgs (nC) 3.8 Excellent Temperature Stability Qgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
8.7. Size:1750K vishay
irfd9014 sihfd9014.pdf 
IRFD9014, SiHFD9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.50 For Automatic Insertion RoHS* Qg (Max.) (nC) 12 COMPLIANT End Stackable Qgs (nC) 3.8 P-Channel Qgd (nC) 5.1 175 C Operating Temperature Configuration Single Fast Switchin
Otros transistores... IRFD210
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