IRFD9024 Datasheet and Replacement
Type Designator: IRFD9024
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 360 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: HD-1
IRFD9024 substitution
IRFD9024 Datasheet (PDF)
irfd9024pbf.pdf
PD- 95922IRFD9024PbF Lead-Free10/27/04Document Number: 91137 www.vishay.com1IRFD9024PbFDocument Number: 91137 www.vishay.com2IRFD9024PbFDocument Number: 91137 www.vishay.com3IRFD9024PbFDocument Number: 91137 www.vishay.com4IRFD9024PbFDocument Number: 91137 www.vishay.com5IRFD9024PbFDocument Number: 91137 www.vishay.com6IRFD9024PbFPeak Diode R
irfd9024 sihfd9024.pdf
IRFD9024, SiHFD9024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.28 For Automatic InsertionRoHS*Qg (Max.) (nC) 19COMPLIANT End StackableQgs (nC) 5.4 P-ChannelQgd (nC) 11 Fast SwitchingConfiguration Single 175 C Operating Temperature
irfd9024pbf sihfd9024.pdf
IRFD9024, SiHFD9024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.28 For Automatic InsertionRoHS*Qg (Max.) (nC) 19COMPLIANT End StackableQgs (nC) 5.4 P-ChannelQgd (nC) 11 Fast SwitchingConfiguration Single 175 C Operating Temperature
Datasheet: IRFD210 , IRFD214 , IRFD220 , IRFD224 , IRFD310 , IRFD320 , IRFD420 , IRFD9014 , IRF3205 , IRFD9110 , IRFD9120 , IRFD9210 , IRFD9220 , IRFDC20 , IRFE024 , IRFE110 , IRFE120 .
Keywords - IRFD9024 MOSFET datasheet
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IRFD9024 replacement
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