IRFD9024 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRFD9024
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.6 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 19(max) nC
   trⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: HD-1

IRFD9024 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFD9024 Datasheet (PDF)

..1. Size:1837K international rectifier
irfd9024pbf.pdf

PD- 95922IRFD9024PbF Lead-Free10/27/04Document Number: 91137 www.vishay.com1IRFD9024PbFDocument Number: 91137 www.vishay.com2IRFD9024PbFDocument Number: 91137 www.vishay.com3IRFD9024PbFDocument Number: 91137 www.vishay.com4IRFD9024PbFDocument Number: 91137 www.vishay.com5IRFD9024PbFDocument Number: 91137 www.vishay.com6IRFD9024PbFPeak Diode R

..2. Size:178K international rectifier
irfd9024.pdf

..3. Size:1688K vishay
irfd9024 sihfd9024.pdf

IRFD9024, SiHFD9024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.28 For Automatic InsertionRoHS*Qg (Max.) (nC) 19COMPLIANT End StackableQgs (nC) 5.4 P-ChannelQgd (nC) 11 Fast SwitchingConfiguration Single 175 C Operating Temperature

..4. Size:1690K vishay
irfd9024pbf sihfd9024.pdf

7.1. Size:266K international rectifier
irfd9020.pdf

PD- 90462IRFD9020www.irf.com 106/09/05IRFD90202 www.irf.comIRFD9020www.irf.com 3IRFD90204 www.irf.comIRFD9020www.irf.com 5IRFD90206 www.irf.comIRFD9020Peak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+- +- dv/dt controlled by RG

7.2. Size:1033K vishay
irfd9020pbf.pdf

IRFD9020, SiHFD9020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dv/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.28RoHS* For Automatic InsertionQg (Max.) (nC) 19COMPLIANT End StackableQgs (nC) 5.4 P-ChannelQgd (nC) 11 175 C Opertaing TemperatureConfiguration Single Fast Switching

8.1. Size:448K international rectifier
irfd9010.pdf

8.2. Size:1819K international rectifier
irfd9014pbf.pdf

PD- 95925IRFD9014PbF Lead-Free10/27/04Document Number: 91136 www.vishay.com1IRFD9014PbFDocument Number: 91136 www.vishay.com2IRFD9014PbFDocument Number: 91136 www.vishay.com3IRFD9014PbFDocument Number: 91136 www.vishay.com4IRFD9014PbFDocument Number: 91136 www.vishay.com5IRFD9014PbFDocument Number: 91136 www.vishay.com6IRFD9014PbFPeak Diode R

8.3. Size:177K international rectifier
irfd9014.pdf

8.4. Size:1751K vishay
irfd9014pbf sihfd9014.pdf

IRFD9014, SiHFD9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.50 For Automatic InsertionRoHS*Qg (Max.) (nC) 12COMPLIANT End StackableQgs (nC) 3.8 P-ChannelQgd (nC) 5.1 175 C Operating TemperatureConfiguration Single Fast Switchin

8.5. Size:131K vishay
irfd9010pbf sihfd9010.pdf

IRFD9010, SiHFD9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) - 50 Compact, End Stackable Fast SwitchingRDS(on) ()VGS = - 10 V 0.50 Low Drive CurrentQg (Max.) (nC) 11 Easy ParalleledQgs (nC) 3.8 Excellent Temperature StabilityQgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E

8.6. Size:129K vishay
sihfd9010 irfd9010.pdf