AONR62818 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AONR62818
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 54 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 280 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0066 Ohm
Paquete / Cubierta: DFN3.3X3.3
Búsqueda de reemplazo de AONR62818 MOSFET
AONR62818 Datasheet (PDF)
aonr62818.pdf

AONR62818TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology ID (at VGS=10V) 50A Best in Class Low RDS(ON) Low Switching Loss RDS(ON) (at VGS=10V)
aonr62921.pdf

AONR62921100V N-Channel MOSFETGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 50A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aonr66620.pdf

AONR66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)
aonr66821.pdf

AONR66821TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology 80V ID (at VGS=10V) 93A Low RDS(ON) Excellent QG x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
Otros transistores... AON7568 , AONE36132 , AONE36182 , AONR21307 , AONR21357 , AONR32314 , AONR36366 , AONR36368 , IRF1010E , AONR66406 , AONS21307 , AONS21357 , AONS32306 , AONS32314 , AONS62602 , AONS62614 , AONS62618 .
History: TPP65R170M | PSMN1R4-40YLD | MS74N62 | BUZ73L | AONS66613 | VBZM100N03 | STI23NM60N
History: TPP65R170M | PSMN1R4-40YLD | MS74N62 | BUZ73L | AONS66613 | VBZM100N03 | STI23NM60N



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