AONR62818 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AONR62818
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0066 Ohm
   Paquete / Cubierta: DFN3.3X3.3

Búsqueda de reemplazo de MOSFET AONR62818

AONR62818 Datasheet (PDF)

..1. Size:336K aosemi
aonr62818.pdf

AONR62818TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology ID (at VGS=10V) 50A Best in Class Low RDS(ON) Low Switching Loss RDS(ON) (at VGS=10V)

8.1. Size:715K aosemi
aonr62921.pdf

AONR62921100V N-Channel MOSFETGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 50A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.1. Size:483K aosemi
aonr66620.pdf

AONR66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)

9.2. Size:442K aosemi
aonr66821.pdf

AONR66821TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology 80V ID (at VGS=10V) 93A Low RDS(ON) Excellent QG x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

9.3. Size:806K aosemi
aonr66922.pdf

AONR66922TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) RDS(ON) (at VGS=10V)

9.4. Size:487K aosemi
aonr66924.pdf

AONR66924TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 32A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.5. Size:386K aosemi
aonr66820.pdf

AONR66820TM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V Trench Power MOSFET - AlphaSGT2TM technology 80V ID (at VGS=10V) 50A Low RDS(ON) Excellent Qg x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

9.6. Size:332K aosemi
aonr66406.pdf

AONR66406TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 30A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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Recientemente añadidas las descripciónes de los transistores: