All MOSFET. AONR62818 Datasheet

 

AONR62818 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AONR62818
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
   Package: DFN3.3X3.3

 AONR62818 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AONR62818 Datasheet (PDF)

 ..1. Size:336K  aosemi
aonr62818.pdf

AONR62818 AONR62818

AONR62818TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology ID (at VGS=10V) 50A Best in Class Low RDS(ON) Low Switching Loss RDS(ON) (at VGS=10V)

 8.1. Size:715K  aosemi
aonr62921.pdf

AONR62818 AONR62818

AONR62921100V N-Channel MOSFETGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 50A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:483K  aosemi
aonr66620.pdf

AONR62818 AONR62818

AONR66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)

 9.2. Size:442K  aosemi
aonr66821.pdf

AONR62818 AONR62818

AONR66821TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology 80V ID (at VGS=10V) 93A Low RDS(ON) Excellent QG x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 9.3. Size:806K  aosemi
aonr66922.pdf

AONR62818 AONR62818

AONR66922TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) RDS(ON) (at VGS=10V)

 9.4. Size:487K  aosemi
aonr66924.pdf

AONR62818 AONR62818

AONR66924TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 32A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 9.5. Size:386K  aosemi
aonr66820.pdf

AONR62818 AONR62818

AONR66820TM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V Trench Power MOSFET - AlphaSGT2TM technology 80V ID (at VGS=10V) 50A Low RDS(ON) Excellent Qg x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 9.6. Size:332K  aosemi
aonr66406.pdf

AONR62818 AONR62818

AONR66406TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 30A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top